Busca avançada
Ano de início
Entree


Effective g-factor tensor for carriers in IV-VI semiconductor quantum wells

Texto completo
Autor(es):
Ridolfi, E. ; de Andrada e Silva, E. A. ; La Rocca, G. C.
Número total de Autores: 3
Tipo de documento: Artigo Científico
Fonte: PHYSICAL REVIEW B; v. 91, n. 8, p. 6-pg., 2015-02-27.
Resumo

Atheory for the electron (and hole) g factor in multivalley lead-salt IV-VI semiconductor quantum wells (QWs) is presented. An effective Hamiltonian for theQWelectronic states in the presence of an external magnetic field is introduced within the envelope-function approximation, based on the multiband kp Dimmock model for the bulk. The mesoscopic spin-orbit (Rashba-type) and Zeeman interactions are taken into account on an equal footing and the effective g factor in symmetric quantum wells (g*(QW)) is calculated analytically for each nonequivalent conduction-band (and valence-band) valley, and for QWs grown along different crystallographic directions. (AU)

Processo FAPESP: 14/09878-1 - 32nd International Conference on the Physics of Semiconductors, ICPS-2014
Beneficiário:Erasmo Assumpção de Andrada e Silva
Modalidade de apoio: Auxílio à Pesquisa - Reunião - Exterior