| Texto completo | |
| Autor(es): |
Nanclares, Dimy
;
Lima, Leandro R. F.
;
Lewenkopf, Caio H.
;
Dias da Silva, Luis G. G. V.
Número total de Autores: 4
|
| Tipo de documento: | Artigo Científico |
| Fonte: | PHYSICAL REVIEW B; v. 96, n. 15, p. 9-pg., 2017-10-04. |
| Resumo | |
Inverted HgTe/CdTe quantum wells have been used as a platform for the realization of two-dimensional topological insulators, bulk insulator materials with spin-helical metallic edge states protected by time-reversal symmetry. This paper investigates the spectrum and the charge transport in HgTe/CdTe quantum well junctions both in the topological regime and in the absence of time-reversal symmetry. We model the system using the Bernevig-Hughes-Zhang effective Hamiltonian and compute the transport properties using recursive Green's functions with a finite differences' method. Specifically, we have studied the material's spatially resolved conductance in a setup with a gated central region, forming monopolar (n-n'-n) and heteropolar (n-p-n, n-TI-n) double junctions, which have been recently realized in experiments. We find regimes in which the edge states carry spin-polarized currents in the central region even in the presence of a small magnetic field, which breaks time-reversal symmetry. More interestingly, the conductance displays spin-dependent, Fabry-Perot-like oscillations as a function of the central gate voltage producing tunable, fully spin-polarized currents through the device. (AU) | |
| Processo FAPESP: | 16/18495-4 - Transporte eletrônico e efeitos de correlação em materiais topológicos |
| Beneficiário: | Luis Gregório Godoy de Vasconcellos Dias da Silva |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |