Channel Width Influence on the Analog Performance of the Asymmetric Self-Cascode FD SOI nMOSFETs

Autor(es)

Assalti, R. ; de Souza, M. ; Flandre, D. ; IEEE

• Tipo de documento: Artigo Científico
• Fonte: 2017 32ND SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO): CHIP ON THE SANDS; v. N/A, p. 4-pg., 2017-01-01.

Resumo

In this paper, the analog performance of the Asymmetric Self-Cascode structure of Fully Depleted SOI nMOSFETs has been evaluated with regards to the variation of channel width, through three-dimensional numerical simulations. The largest gain has been obtained using the narrowest transistor near the source and the widest transistor near the drain. (AU)

• Processo FAPESP: 15/08616-6 - Modelagem, Simulação e Fabricação de Circuitos Analógicos com Associação Série Assimétrica de Transistores SOI
• Beneficiário: Rafael Assalti
• Modalidade de apoio: Bolsas no Brasil - Doutorado