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Modeling huge photoinduced spin polarons in intrinsic magnetic semiconductors

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Autor(es):
van Kooten, S. C. P. ; Gratens, X. ; Henriques, A. B.
Número total de Autores: 3
Tipo de documento: Artigo Científico
Fonte: PHYSICAL REVIEW B; v. 103, n. 3, p. 6-pg., 2021-01-15.
Resumo

In intrinsic magnetic semiconductors, the absorption of a single photon can generate a spin polaron, whose magnetic moment reaches many thousands of Bohr magnetons. Here we investigate these huge photoinduced spin polarons, using Monte Carlo simulations. In antiferromagnetic semiconductors, photoinduced spin polarons are most efficiently generated in the whole temperature interval up to the phase transition, whereas in ferromagnetic semiconductors much larger spin polarons can be photoinduced, but only around the phase transition temperature. Because Monte Carlo simulations are computationally expensive, we developed an analytical model, based on Weiss field theory. Although the Weiss model does not provide as much information as a Monte Carlo simulation, such as spin texture and fluctuations, it yields formulas that can be used to estimate instantly the expected photoinduced spin polaron size in many intrinsic magnetic semiconductors. (AU)

Processo FAPESP: 19/02407-7 - Manipulação das propriedades físicas de materiais em escala ultra-rápida
Beneficiário:Andre Bohomoletz Henriques
Modalidade de apoio: Auxílio à Pesquisa - Regular