Atomically Precise Bottom-Up Synthesis of h-BNC: Graphene Doped with h-BN Nanoclusters

Autor(es)

Herrera-Reinoza, Nataly ; dos Santos, Alisson Ceccatto ; de Lima, Luis Henrique ; Landers, Richard ; de Siervo, Abner

• Tipo de documento: Artigo Científico
• Fonte: CHEMISTRY OF MATERIALS; v. 33, n. 8, p. 12-pg., 2021-03-24.

Resumo

Monolayer hexagonal boron-nitrogen-carbon (h-BNC) is considered a prominent candidate for the next generation of semiconductor electronic devices. Nevertheless, experimental evidence of h-BNC formation is limited, including a detailed study of its morphological and electronic properties. Here, successful growth of h-BNC from an unexplored single molecular precursor (hexamethyl borazine, C6H18B3N3) using a conventional CVD approach on Ir(111) is reported. The conformation structure of the monolayer and its correlation with the local electronic properties are discussed based on scanning tunneling microscopy/spectroscopy (STM/STS) and X-ray photoelectron spectroscopy (XPS) results. The results show an h-BNC structure that can be described as BN-doped graphene since the moire ' lattice parameter is preserved along with the alloy. This BN-doped cluster, renamed as h-BN "nanodonuts" according to the electronic density exhibited in STM images, have a tendency to place specific positions within the moire superstructure, and it is constituted by at least (BN)(8) units arranged in a 6-fold BN rings conformation, as evidenced by simulation of STM images based on density functional theory (DFT). For a BN concentration of about 17%, a band gap between 1.4 and 1.6 eV was determined. The versatility of the novel molecular precursor is proven by the growth of a high-quality h-BN monolayer on Rh(111). (AU)

• Processo FAPESP: 07/08244-5 - Estudo das propriedades magnéticas de filmes ultrafinos e nanopartículas de Pd e PdAu via XMCD
• Beneficiário: Abner de Siervo
• Modalidade de apoio: Auxílio à Pesquisa - Regular
• Processo FAPESP: 16/21402-8 - Crescimento e caracterização de heteroestruturas bidimensionais: dicalcogenetos de metais de transição sobre grafeno e nitreto de boro hexagonal
• Beneficiário: Luis Henrique de Lima
• Modalidade de apoio: Bolsas no Brasil - Pós-Doutorado
• Processo FAPESP: 07/54829-5 - Estrutura eletrônica e geométrica de nano materiais: um estudo por radiação sincroton
• Beneficiário: Richard Landers
• Modalidade de apoio: Auxílio à Pesquisa - Temático