Impact of Ionizing Radiation and Temperature on the Performance of pMOSFETs with Different Layouts

Autor(es)

Grandesi, Guilherme Inacio ; Garcia, Paulo R., Jr. ; Boas, Alexis, V ; Giacomini, Renato ; Seixas, L. E. ; Guazzelli, Marcilei A.

• Tipo de documento: Artigo Científico
• Fonte: 2024 38TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES, SBMICRO 2024; v. N/A, p. 4-pg., 2024-01-01.

Resumo

This study investigates whether there is a difference in behavior between different layouts of MOSFET transistors, ELT and Rectangular, in terms of their functionalities at different temperatures, reflecting the effects of exposure to ionizing radiation and the bias mode as it was irradiated. The analysis focuses on the subthreshold slope and ION/IOFF ratio, among other parameters, to evaluate device robustness. This study highlights the importance of layout design in enhancing the radiation resilience of semiconductor devices. (AU)

• Processo FAPESP: 22/09131-0 - Efeito de Dose Total Ionizante em transistores de Potência PMOS
• Beneficiário: Paulo Roberto Garcia Junior
• Modalidade de apoio: Bolsas no Brasil - Iniciação Científica
• Processo FAPESP: 18/25225-9 - Centro de Pesquisa e Análise de São Paulo
• Beneficiário: Sergio Ferraz Novaes
• Modalidade de apoio: Auxílio à Pesquisa - Projetos Especiais
• Processo FAPESP: 20/04867-2 - Física e instrumentação de altas energias com o LHC-CERN
• Beneficiário: Marcelo Gameiro Munhoz
• Modalidade de apoio: Auxílio à Pesquisa - Projetos Especiais