Nanodiamond infiltration into porous silicon through etching of solid carbon produced at different graphitization temperatures

Autor(es)

Miranda, C. R. B. ^[1] ; Baldan, M. R. ^[2] ; Beloto, A. F. ^[2] ; Ferreira, N. G. ^[2]

Afiliação do(s) autor(es)

^[1] CCST, INPE, BR-12245970 Sao Jose Dos Campos, SP - Brazil

^[2] CTE INPE, Ctr Tecnol Espaciais, BR-12245970 Sao Jose Dos Campos, SP - Brazil

• Tipo de documento: Artigo Científico
• Fonte: JOURNAL OF NANOPARTICLE RESEARCH; v. 13, n. 9, p. 4219-4228, SEP 2011.
• Citações Web of Science: 1

Resumo

Nanocrystalline diamond (NCD) was grown on the porous silicon (PS) substrate using Reticulated Vitreous Carbon (RVC) as an additional solid carbon source. RVC was produced at different heat treatment temperatures of 1300, 1500, and 2000 A degrees C, resulting in samples with different turbostratic carbon organizations. The PS substrate was produced by an electrochemical method. NCD film was obtained by the chemical vapor infiltration/deposition process where a RVC piece was positioned just below the PS substrate. The PS and NCD samples were characterized by Field Emission Gun-Scanning Electron Microscopy (FEG-SEM). NCD films presented faceted nanograins with uniform surface texture covering all the pores resulting in an apparent micro honeycomb structure. Raman's spectra showed the D and G bands, as well as, the typical two shoulders at 1,150 and 1,490 cm(-1) attributed to NCD. X-ray diffraction analyses showed the predominant (111) diamond orientation as well as the (220) and (311) peaks. The structural organization and the heteroatom presence on the RVC surface, analyzed from X-ray photoelectron spectroscopy, showed their significant influence on the NCD growth process. The hydrogen etching released, from RVC surface, associated to carbon and/or oxygen/nitrogen amounts led to different contributions for NCD growth. (AU)

• Processo FAPESP: 03/13454-8 - Nanocristais de diamante com variação controlada de carbono com hibridização sp2 e sp3 em aplicações eletroquímicas
• Beneficiário: Adriana Faria Azevedo
• Modalidade de apoio: Bolsas no Brasil - Pós-Doutorado