Autor(es)

Masteghin, Mateus G. ; Silva, Ranilson A. ; Orlandi, Marcelo O.

• Tipo de documento: Artigo Científico
• Fonte: SENSORS AND ACTUATORS A-PHYSICAL; v. 374, p. 10-pg., 2024-05-15.

Resumo

Although semiconducting metal oxide sensors present reasonable sensitivity, an improved lower detection limit and/or selectivity would allow broadening real-time monitoring applications. This work reports the growth mechanism and gas sensing performance of zinc tin oxide-based structures synthesised via a microwave-assisted hydrothermal route. The synthesised materials were characterised by X-ray diffraction (XRD), Raman and Fourier-transform infrared (FTIR) spectroscopy, scanning and scanning transmission electron microscopy (SEM and STEM), X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDS), and nitrogen adsorption/desorption experiments. Gas sensor measurements showed that ZnSnO3 presents an outstanding lower detection limit to nitrogen dioxide (NO2), in which a 10-fold increase in electrical resistance is expected in the presence of 1 ppb NO2 at an operating temperature of 150 degrees C. Moreover, the Zn2SnO4/SnO2 heterostructure exhibited superior selectivity to NO2 relative to hydrogen (H-2) and carbon monoxide (CO), exhibiting a sensor response similar to 1500 times higher for the oxidising gas. Hence, it is demonstrated that nanostructures ' growth engineering can realise lower detection limits and ultra-selective high-performance gas sensor devices through a greater surface area and enhanced contact potential barriers. (AU)

• Processo FAPESP: 17/26219-0 - Estudo de Sensores Químicos de Elemento Único a base de semicondutores de óxidos metálicos
• Beneficiário: Marcelo Ornaghi Orlandi
• Modalidade de apoio: Auxílio à Pesquisa - Regular
• Processo FAPESP: 15/21033-0 - Comparação da resposta como sensor de gás de dispositivos com nanofita única e com múltiplas nanofitas de óxido de estanho
• Beneficiário: Mateus Gallucci Masteghin
• Modalidade de apoio: Bolsas no Brasil - Mestrado