Autor(es)

Silva, Ana Luiza C. ; Vargas, Luis M. B. ; Peres, Marcelos L. ; Teodoro, Marcio D. ; de Godoy, Marcio P. F.

• Tipo de documento: Artigo Científico
• Fonte: COATINGS; v. 14, n. 4, p. 14-pg., 2024-04-01.

Resumo

Strategies to achieve p-type behavior in semiconductor oxides are an important current topic of research. Our study showed that sodium-doped zinc oxide thin films are a plausible approach. The insertion of dopant allowed a transition between n-type p-type electrical behavior in specific temperature ranges around 300 K. Annealing procedures under controlled atmospheres, including Ar, N2, and O2, increased the hole density up to a magnitude of 1016 cm-3, although this also reduced the window temperature. The micro-photoluminescence spectra showed an enhancement of defect-related emissions as the dopant content increased. Notably, yellow-green emissions (around 2.38 eV-520 nm) were the most prominent in the as-grown samples. After annealing, a strong redshift of the defect band was observed (around 1.85 eV-670 nm). Our findings showed that p-type ZnO:Na films exhibited emissions associated with RGB primary colors. In a chromaticity diagram, as-grown samples appeared near the white range, annealed films were close to the warm white area, and O2 annealed films trended within the red range. (AU)

• Processo FAPESP: 22/10340-2 - EMU científico: aquisição de um sistema de fluorescência de alta resolução temporal, espacial, espectral e operando em amplo intervalo de temperatura
• Beneficiário: Gilmar Eugenio Marques
• Modalidade de apoio: Auxílio à Pesquisa - Programa Infraestrutura - Científico