Effect of interface traps on the different conduction mechanisms of MISHEMT from 200 K to 450 K

Autor(es)

Perina, Welder F. ; Martino, Joao A. ; Agopian, Paula G. D.

• Tipo de documento: Artigo Científico
• Fonte: 2024 38TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES, SBMICRO 2024; v. N/A, p. 4-pg., 2024-01-01.

Resumo

In this work, the effect of the interface traps on the different conduction mechanisms of a Metal Insulator Semiconductor High Electron Mobility Transistor (MISHEMT) operating in multiple temperatures (from 200 K to 450 K) is evaluated through High Electron Mobility Transistor (HEMT) and Metal Insulator Semiconductor Field Effect Transistor (MISFET) numerical simulations. The interface traps of the MISFET poses barely any effect on the threshold voltage. For the HEMT, however, the behavior with traps enabled is basically the opposite when the traps are disabled. Combining the opposite behaviors of the threshold voltage curves of the MISFET and HEMT as a function of temperature, gives a possible explanation of the threshold voltage rebound effect observed in MISHEMT. (AU)

• Processo FAPESP: 20/04867-2 - Física e instrumentação de altas energias com o LHC-CERN
• Beneficiário: Marcelo Gameiro Munhoz
• Modalidade de apoio: Auxílio à Pesquisa - Projetos Especiais