| Texto completo | |
| Autor(es): |
de Souza, Adelcio M.
;
Celino, Daniel R.
;
Romero, Murilo A.
Número total de Autores: 3
|
| Tipo de documento: | Artigo Científico |
| Fonte: | 2023 37TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES, SBMICRO; v. N/A, p. 4-pg., 2023-01-01. |
| Resumo | |
This paper describes a new compact model for the I-V characteristics of ballistic transistors based on two-dimensional semiconductors (2D-FETs). Our model is explicit, fully analytical, and includes non-idealities such as short-channel effects. The obtained I-V curves are validated against rigorous numerical investigations in the literature, demonstrating excellent agreement. (AU) | |
| Processo FAPESP: | 18/13537-6 - Modelagem compacta de transistores MOS baseados em efeitos quânticos |
| Beneficiário: | Adelcio Marques de Souza |
| Modalidade de apoio: | Bolsas no Brasil - Doutorado |