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Pulse Dynamics in Reduced Graphene Oxide Electrolyte-Gated Transistors: Charge Memory Effects and Mechanisms Governing the Ion-To-Electron Transduction

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Autor(es):
Selmi, Guilherme Segolin ; Lourenco Neto, Eduardo Rodrigues ; Lelis, Gabrielle Coelho ; Okazaki, Anderson Kenji ; Riul Jr, Antonio ; Braunger, Maria Luisa ; de Oliveira, Rafael Furlan
Número total de Autores: 7
Tipo de documento: Artigo Científico
Fonte: ADVANCED ELECTRONIC MATERIALS; v. N/A, p. 12-pg., 2024-12-17.
Resumo

Electrolyte-gated transistors (EGTs) are widely employed in bioelectronics due to their ability to bridge ionic and electronic phenomena in a single device. Among potential materials, reduced graphene oxide (rGO) has gained significant attention due to its ambipolar current response, quantum capacitance, and tunable conductivity. However, the rGO EGT dynamic behavior remains significantly unexplored. Here, the time-dependent response of rGO EGTs is systematically investigated under gate voltage pulsing across different time scales (10 ms to 40 s) and amplitudes (up to |+/- 0.8 V|). Significant charge memory is observed, particularly for long (40 s) pulses at 0.8 V, with effects also evident for shorter (1 s) and weaker stimuli (0.6 V). Multiple low-level (0.1 V) fast pulsing (100 ms) further demonstrate charge retention post-stimulation. All these characteristics are attributed to a complex interplay between ion entrapment within the rGO film, electrical double-layer formation, and charge transfer processes. The stability of rGO EGTs under prolonged bias stress is also examined, aiming to contribute to the development of more robust devices. These findings revealed the complex role of electrolyte ions and electronic carriers governing the ion-to-electron transduction and charge memory effects in rGO EGTs, contributing to the advancement of the next-generation bioelectronic devices. (AU)

Processo FAPESP: 21/06238-5 - Materiais 2D funcionalizados processados em solução: desenvolvimento de sensores e biossensores elétricos prototipáveis
Beneficiário:Rafael Furlan de Oliveira
Modalidade de apoio: Auxílio à Pesquisa - Jovens Pesquisadores
Processo FAPESP: 23/03501-2 - Avaliação da Operação e Estabilidade de Transistores Eletrolíticos de Óxido de Grafeno Reduzido em Condições Fisiológicas Artificiais visando Biossensoriamento
Beneficiário:Gabrielle Coelho Lelis
Modalidade de apoio: Bolsas no Brasil - Iniciação Científica
Processo FAPESP: 19/14949-9 - EMU: infraestrutura multiusuário dedicada à nanofabricação e caracterização de nanodispositivos no LNNano / CNPEM
Beneficiário:Edson Roberto Leite
Modalidade de apoio: Auxílio à Pesquisa - Programa Equipamentos Multiusuários