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Analysis 1T′-MoTe2 saturable absorber integrated to a silicon nitride waveguide

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Autor(es):
Volpato, Maria Carolina ; Rosa, Henrique G. ; de Assis, Pierre-Louis ; Frateschi, Newton Cesario
Número total de Autores: 4
Tipo de documento: Artigo Científico
Fonte: 2024 SBFOTON INTERNATIONAL OPTICS AND PHOTONICS CONFERENCE, SBFOTON IOPC 2024; v. N/A, p. 3-pg., 2024-01-01.
Resumo

In this work, we investigate the saturable absorption behavior of a 1T'-MoTe2 monolayer placed on top of a silicon nitride waveguide. Saturable absorption is modeled by calculating the quasi-Fermi level separation upon light absorption and carrier generation. After simulating the coupling between the monolayer and a silicon nitride waveguide, we propose an integrated saturable absorber with 20% coupling efficiency and about 2 mu W of saturation intensity, for a typical monolayer of 50 mu m. Our results demonstrate significant potential for 1T'-MoTe2 in on-chip photonic devices, offering a compact and efficient alternative to conventional absorbers. (AU)

Processo FAPESP: 18/25339-4 - Dispositivos fotônicos integrados
Beneficiário:Newton Cesario Frateschi
Modalidade de apoio: Auxílio à Pesquisa - Temático