Autor(es)

Mori, C. A. B. ; Duarte, P. H. ; Rangel, R. C. ; Agopian, P. G. D. ; Martino, J. A.

• Tipo de documento: Artigo Científico
• Fonte: Solid-State Electronics; v. 229, p. 4-pg., 2025-11-01.

Resumo

This work presents for the first time the experimental results of a Dual-Technology FET (DT-FET). DT-FET is a SOI transistor capable of operating either as an n-type MOSFET (nMOS) or a p-type Tunnel-FET (pTFET), depending on the back gate bias and the source/drain bias conditions. It is an extension of the BESOI MOSFET, with the addition of N + at the drain or source region, which results in different physics of operation depending on back the gate bias. For a positive back gate bias the device behaves as an nMOS, while for a negative back gate bias it behaves as a pTFET. The results were compared with 2D simulations, showing that the overall trends are similar. (AU)

• Processo FAPESP: 17/26489-7 - Projeto e fabricação de um BE SOI Túnel-FET como elemento biossensor
• Beneficiário: Carlos Augusto Bergfeld Mori
• Modalidade de apoio: Bolsas no Brasil - Doutorado