Graphene Heterostructure-Based Non-Volatile Memory Devices with Top Floating Gate Programming

Autor(es)

Labes Rodrigues, Gabriel ; Yoshida, Ana B. ; Selmi, Guilherme S. ; Tomi Kamijo Barbosa de Jesus, Nickolas ; Filgueira e Silva, Igor Ricardo ; Watanabe, Kenji ; Taniguchi, Takashi ; de Oliveira, Rafael F. ; Lopez-Richard, Victor ; Cadore, Alisson R.

• Tipo de documento: Artigo Científico
• Fonte: ACS APPLIED ELECTRONIC MATERIALS; v. N/A, p. 9-pg., 2025-10-13.

Resumo

We present a graphene-based memory platform built on dual-gated field-effect transistors (GFETs). By integrating a lithographically defined metal patch directly atop the hexagonal boron nitride (hBN)-graphene channel, the device functions simultaneously as a top gate, floating gate (FG) reservoir, and active reset contact. This architecture forms an ultrathin van der Waals heterostructure with strong capacitive coupling to the back-gate, confirmed by a dynamic model, enabling a tunable and wide memory window that scales with back-gate voltage and is further enhanced by reducing hBN thickness or increasing FG area. Our devices demonstrate reversible, high-efficiency (>90%) charge programming, robust nonvolatile behavior across 10-300 K and a wide range of operation speeds, and endurance beyond 9800 cycles. Importantly, a grounded top electrode provides on-demand charge erasure, offering functionality that is absent in standard FG designs. These results position hBN/graphene-based GFETs as a compact, energy-efficient platform for next-generation 2D flash memory, with implications for multilevel memory schemes and cryogenic electronics. (AU)

• Processo FAPESP: 23/09395-0 - Equipamento Multiusuário (EMU) concedido no processo 2021/06238-5: analisador de parâmetros semicondutores Keithley 4200A
• Beneficiário: Rafael Furlan de Oliveira
• Modalidade de apoio: Auxílio à Pesquisa - Programa Equipamentos Multiusuários
• Processo FAPESP: 24/00989-7 - Centro de Pesquisa em Engenharia Molecular para Materiais Avançados (CEMol)
• Beneficiário: Edson Roberto Leite
• Modalidade de apoio: Auxílio à Pesquisa - Centros de Pesquisa, Inovação e Difusão - CEPIDs
• Processo FAPESP: 19/14949-9 - EMU: infraestrutura multiusuário dedicada à nanofabricação e caracterização de nanodispositivos no LNNano / CNPEM
• Beneficiário: Edson Roberto Leite
• Modalidade de apoio: Auxílio à Pesquisa - Programa Equipamentos Multiusuários