| Texto completo | |
| Autor(es): |
Labes Rodrigues, Gabriel
;
Yoshida, Ana B.
;
Selmi, Guilherme S.
;
Tomi Kamijo Barbosa de Jesus, Nickolas
;
Filgueira e Silva, Igor Ricardo
;
Watanabe, Kenji
;
Taniguchi, Takashi
;
de Oliveira, Rafael F.
;
Lopez-Richard, Victor
;
Cadore, Alisson R.
Número total de Autores: 10
|
| Tipo de documento: | Artigo Científico |
| Fonte: | ACS APPLIED ELECTRONIC MATERIALS; v. N/A, p. 9-pg., 2025-10-13. |
| Resumo | |
We present a graphene-based memory platform built on dual-gated field-effect transistors (GFETs). By integrating a lithographically defined metal patch directly atop the hexagonal boron nitride (hBN)-graphene channel, the device functions simultaneously as a top gate, floating gate (FG) reservoir, and active reset contact. This architecture forms an ultrathin van der Waals heterostructure with strong capacitive coupling to the back-gate, confirmed by a dynamic model, enabling a tunable and wide memory window that scales with back-gate voltage and is further enhanced by reducing hBN thickness or increasing FG area. Our devices demonstrate reversible, high-efficiency (>90%) charge programming, robust nonvolatile behavior across 10-300 K and a wide range of operation speeds, and endurance beyond 9800 cycles. Importantly, a grounded top electrode provides on-demand charge erasure, offering functionality that is absent in standard FG designs. These results position hBN/graphene-based GFETs as a compact, energy-efficient platform for next-generation 2D flash memory, with implications for multilevel memory schemes and cryogenic electronics. (AU) | |
| Processo FAPESP: | 23/09395-0 - Equipamento Multiusuário (EMU) concedido no processo 2021/06238-5: analisador de parâmetros semicondutores Keithley 4200A |
| Beneficiário: | Rafael Furlan de Oliveira |
| Modalidade de apoio: | Auxílio à Pesquisa - Programa Equipamentos Multiusuários |
| Processo FAPESP: | 24/00989-7 - Centro de Pesquisa em Engenharia Molecular para Materiais Avançados (CEMol) |
| Beneficiário: | Edson Roberto Leite |
| Modalidade de apoio: | Auxílio à Pesquisa - Centros de Pesquisa, Inovação e Difusão - CEPIDs |
| Processo FAPESP: | 19/14949-9 - EMU: infraestrutura multiusuário dedicada à nanofabricação e caracterização de nanodispositivos no LNNano / CNPEM |
| Beneficiário: | Edson Roberto Leite |
| Modalidade de apoio: | Auxílio à Pesquisa - Programa Equipamentos Multiusuários |