Valence-bond theory of highly disordered quantum antiferromagnets

Autor(es)

Zhou, S. ^[1] ; Hoyos, J. A. ^[2] ; Dobrosavljevic, V. ^[1] ; Miranda, E. ^[3]

Afiliação do(s) autor(es)

^[1] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32310 - USA

^[2] Duke Univ, Dept Phys, Durham, NC 27708 - USA

^[3] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP - Brazil

• Tipo de documento: Artigo Científico
• Fonte: EPL; v. 87, n. 2 JUL 2009.
• Citações Web of Science: 2

Resumo

We present a large-N variational approach to describe the magnetism of insulating doped semiconductors based on a disorder-generalization of the resonating-valence-bond theory for quantum antiferromagnets. This method captures all the qualitative and even quantitative predictions of the strong-disorder renormalization group approach over the entire experimentally relevant temperature range. Finally, by mapping the problem on a hard-sphere fluid, we could provide an essentially exact analytic solution without any adjustable parameters. Copyright (C) EPLA, 2009 (AU)

• Processo FAPESP: 07/57630-5 - Métodos não perturbativos aplicados a sistemas eletrônicos correlacionados
• Beneficiário: Eduardo Miranda
• Modalidade de apoio: Auxílio à Pesquisa - Temático