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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

Secondary effects on electron multiplication in pure isobutane

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Autor(es):
Mangiarotti, A. [1, 2] ; Lima, I. B. [3] ; Vivaldini, T. C. [3] ; Goncalves, J. A. C. [3] ; Petri, A. R. [3] ; Botelho, S. [3, 4] ; Fonte, P. [1, 5] ; Bueno, C. C. [3, 4]
Número total de Autores: 8
Afiliação do(s) autor(es):
[1] Univ Coimbra, Dept Fis, Lab Instrumentacao & Fis Expt Particulas, P-3004516 Coimbra - Portugal
[2] Univ Coimbra, Dept Fis, Fac Ciencias & Tecnol, P-3004516 Coimbra - Portugal
[3] Inst Pesquisas Energet & Nucl, BR-05508000 Sao Paulo - Brazil
[4] Pontificia Univ Catolica Sao Paulo, Dept Fis, BR-01303050 Sao Paulo - Brazil
[5] Inst Super Engn Coimbra, P-3030199 Coimbra - Portugal
Número total de Afiliações: 5
Tipo de documento: Artigo Científico
Fonte: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SP; v. 694, p. 162-166, DEC 1 2012.
Citações Web of Science: 1
Resumo

The presence of secondary processes in electron multiplication under high uniform electric fields at atmospheric pressure in pure isobutane was investigated. The experimental setup consists of a Resistive Plate Chamber-like cell with the anode made of a high resistivity glass (2 x 10(12) Omega cm) and a metallic cathode, on which photoelectrons are produced by the incidence of a pulsed laser beam. In particular, the dependence of the first Townsend coefficient (alpha) on the repetition rate and the intensity of the UV laser pulses was studied. The E/N range considered spanned from approximate to 145 to approximate to 200 Td. The alpha coefficient was determined by measuring both the primary ionization and the avalanche currents with the help of an electrometer, directly connected to the cathode. Of all the investigated secondary effects, only the ohmic drop across the resistive glass has been found to be non-negligible in the present experimental conditions and has been corrected for. The obtained values are compared with Magboltz simulation results and presented in tabular form. (C) 2012 Elsevier B.V. All rights reserved. (AU)

Processo FAPESP: 07/50591-4 - Alessio Mangiarotti | Universidade de Coimbra - Portugal
Beneficiário:Carmen Cecília Bueno
Modalidade de apoio: Auxílio à Pesquisa - Pesquisador Visitante - Internacional
Processo FAPESP: 02/04697-1 - Medidas de parâmetros de transporte de elétrons em gases em regime de multiplicação
Beneficiário:Carmen Cecília Bueno
Modalidade de apoio: Auxílio à Pesquisa - Regular
Processo FAPESP: 09/51809-9 - Alessio Mangiarotti | Universidade de Coimbra - Portugal
Beneficiário:Carmen Cecília Bueno
Modalidade de apoio: Auxílio à Pesquisa - Pesquisador Visitante - Internacional