Studies of phosphorus Gaussian profile emitter silicon solar cells

Autor(es)

N. Stem ^[1] ; M. Cid ^[2]

Afiliação do(s) autor(es)

^[1] Universidade de São Paulo. Escola Politécnica. Escola Politécnica - Brasil

^[2] Universidade de São Paulo. Escola Politécnica. Escola Politécnica - Brasil

• Tipo de documento: Artigo Científico
• Fonte: MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS; v. 4, n. 2, p. 143-148, 2001-00-00.

Resumo

Considering recent modifications on n-type highly doped silicon parameters, an emitter optimization was made based on one-dimensional models with analytical solutions. In order to get good accuracy, a fifth order approximation has been considered. Two kinds of emitters, homogeneous and non-homogeneous, with phosphorus Gaussian profile emitter solar cells were optimized. According to our results: homogeneous emitter solar cells show their maximum efficiencies (<FONT FACE="Symbol">h @ 21.60-21.74%)</FONT>with doping levelsnus = 1x10(19) - 5x10(18) (cm-3) and (1.2-2.0) mum emitter thickness range. Non-homogeneous emitter solar cells provide a slightly higher efficiency (eta = 21.82-21.92%), with Ns = 1x10(20) (cm-3) with 2.0 mum thickness under metal-contacted surface and Ns = 1x10(19) - 5x10(18) (cm-3) with (1.2-2.0) mum thickness range, (sheet resistance range 90-100 <FONT FACE="Symbol">W/ <img SRC="http:/img/fbpe/mr/v4n2/n2a17fou.gif" BORDER="0"></FONT>) under passivated surface. Although non-homogeneous emitter solar cells have a higher efficiency than homogeneous emitter ones, the required technology is more complex and their overall interest for practical applications is questionable. (AU)

• Processo FAPESP: 95/09435-0 - Desenvolvimento de células solares de silício de alto rendimento
• Beneficiário: Manuel Cid Sánchez
• Modalidade de apoio: Auxílio à Pesquisa - Jovens Pesquisadores