High red emission intensity of Eu:Y2O3 films grown on Si(100)/Si (111) by electron beam evaporation

Autor(es)

Rivera, V. A. G. ^[1] ; Ferri, F. A. ^[1] ; Clabel H, J. L. ^[2] ; Pereira-da-Silva, M. A. ^{[3, 1]} ; Nunes, L. A. O. ^[1] ; Li, M. Siu ^[1] ; Marega, Jr., E. ^[1]

Afiliação do(s) autor(es)

^[1] Inst Fis Sao Carlos USP, BR-13560970 Sao Carlos, SP - Brazil

^[2] Univ Fed Sao Carlos, Dept Fis, Grp Mat & Disposit, BR-13565905 Sao Carlos, SP - Brazil

^[3] UNICEP, Ctr Univ Cent Paulista, BR-13563470 Sao Carlos, SP - Brazil

• Tipo de documento: Artigo Científico
• Fonte: Journal of Luminescence; v. 148, p. 186-191, APR 2014.
• Citações Web of Science: 5

Resumo

High red photoluminescence emission has been obtained at room temperature in Eu3+-doped yttrium oxide thin films following thermal treatment. Films with different thicknesses were deposited on Si (1 0 0) and Si(1 1 1) substrates via electron beam evaporation in a vacuum environment. The films were subsequently annealed in an oxygen atmosphere for 5 h at 900 degrees C. The structural and optical properties of the films were measured before and after annealing. An improvement in the emission intensity was observed as a result of the thermal treatment under a controlled atmosphere. This observation is related to the reduction of non radiative processes, as verified by the enhancement of the D-5(0)-> F-7(2) lifetime values. This improvement in the emission intensity was also analyzed in terms of electric and magnetic dipole transitions (D-5(0)-> F-7(2) and D-5(0)-> F-7(1) level transitions, respectively). Both transitions are directly related to the site symmetry and, consequently, to the crystalline structure of the films deposited on the Si(1 0 0)/Si(1 1 1) substrates. (C) 2013 Elsevier B.V. All rights reserved. (AU)

• Processo FAPESP: 11/21293-0 - Guias de onda planares para telecomunicações ópticas com plasmon - BEPE-PD
• Beneficiário: Victor Anthony Garcia Rivera
• Modalidade de apoio: Bolsas no Exterior - Estágio de Pesquisa - Pós-Doutorado
• Processo FAPESP: 09/08978-4 - Guias de Onda Planares para Telecomunicações Ópticas com Plasmon
• Beneficiário: Victor Anthony Garcia Rivera
• Modalidade de apoio: Bolsas no Brasil - Pós-Doutorado