| Texto completo | |
| Autor(es): |
Rivera, V. A. G.
[1]
;
Ferri, F. A.
[1]
;
Clabel H, J. L.
[2]
;
Pereira-da-Silva, M. A.
[3, 1]
;
Nunes, L. A. O.
[1]
;
Li, M. Siu
[1]
;
Marega, Jr., E.
[1]
Número total de Autores: 7
|
| Afiliação do(s) autor(es): | [1] Inst Fis Sao Carlos USP, BR-13560970 Sao Carlos, SP - Brazil
[2] Univ Fed Sao Carlos, Dept Fis, Grp Mat & Disposit, BR-13565905 Sao Carlos, SP - Brazil
[3] UNICEP, Ctr Univ Cent Paulista, BR-13563470 Sao Carlos, SP - Brazil
Número total de Afiliações: 3
|
| Tipo de documento: | Artigo Científico |
| Fonte: | Journal of Luminescence; v. 148, p. 186-191, APR 2014. |
| Citações Web of Science: | 5 |
| Resumo | |
High red photoluminescence emission has been obtained at room temperature in Eu3+-doped yttrium oxide thin films following thermal treatment. Films with different thicknesses were deposited on Si (1 0 0) and Si(1 1 1) substrates via electron beam evaporation in a vacuum environment. The films were subsequently annealed in an oxygen atmosphere for 5 h at 900 degrees C. The structural and optical properties of the films were measured before and after annealing. An improvement in the emission intensity was observed as a result of the thermal treatment under a controlled atmosphere. This observation is related to the reduction of non radiative processes, as verified by the enhancement of the D-5(0)-> F-7(2) lifetime values. This improvement in the emission intensity was also analyzed in terms of electric and magnetic dipole transitions (D-5(0)-> F-7(2) and D-5(0)-> F-7(1) level transitions, respectively). Both transitions are directly related to the site symmetry and, consequently, to the crystalline structure of the films deposited on the Si(1 0 0)/Si(1 1 1) substrates. (C) 2013 Elsevier B.V. All rights reserved. (AU) | |
| Processo FAPESP: | 11/21293-0 - Guias de onda planares para telecomunicações ópticas com plasmon - BEPE-PD |
| Beneficiário: | Victor Anthony Garcia Rivera |
| Modalidade de apoio: | Bolsas no Exterior - Estágio de Pesquisa - Pós-Doutorado |
| Processo FAPESP: | 09/08978-4 - Guias de Onda Planares para Telecomunicações Ópticas com Plasmon |
| Beneficiário: | Victor Anthony Garcia Rivera |
| Modalidade de apoio: | Bolsas no Brasil - Pós-Doutorado |