Ultrathin semiconductors deposited by Atomic Layer Deposition (ALD) for solar cell application

• Processo: 14/50718-8
• Modalidade de apoio: Auxílio à Pesquisa - Regular
• Data de Início da vigência: 01 de março de 2015
• Data de Término da vigência: 31 de outubro de 2016
• Área do conhecimento: Ciências Exatas e da Terra - Física - Física da Matéria Condensada
• Acordo de Cooperação: MIT
• Pesquisador responsável: Francisco das Chagas Marques
• Beneficiário: Francisco das Chagas Marques
• Pesquisador Responsável no exterior: Tonio Buonassisi
• Instituição Parceira no exterior: Massachusetts Institute of Technology (MIT), Estados Unidos
• Instituição Sede: Instituto de Física Gleb Wataghin (IFGW). Universidade Estadual de Campinas (UNICAMP). Campinas , SP, Brasil
• Vinculado ao auxílio: 12/10127-5 - Pesquisa e desenvolvimento de materiais nanoestruturados para aplicações eletrônicas e de física de superfícies, AP.TEM
• Assunto(s): Desenvolvimento de novos materiais Óptica eletrônica Semicondutores Células solares Filmes finos Propriedades dos materiais Deposição de camada atômica
• Palavra(s)-Chave do Pesquisador: Atomic Layer Deposition | Solar Cell | Ultra Thin Films

Resumo

This project involves the Photovoltaics Research Laboratory of the University of Campinas and the Photovoltaics Research Laboratory of MIT. It was motivated by previous contacts between Prof. Marques and Prof. Buonassisi in conferences, visits to each others' laboratories and project proposals. In this project, we intend to continue our effort to establish a formal cooperation to strength our research activities. Both laboratories work in the development of materiais for the fabrication of solar cells, including different techniques and charaderization methods. The facilities of both laboratories together potentiate the development of new materiais, new devices and the investigation of a larger variety of optoelectronic, structural and mechanical properties. Both laboratories can benefrt from this cooperation by broadening their activities by the incorporation of new and different techniques to the development and investigation of the properties of materiais and devices. The main focus is related to the development, modeling and investigation of the properties of semicondudors deposited by the Atomic Layer Deposition (ALD). The MIT group has expertise in this area, while we are initiating to work in this area after a recent acquisition of an ALD system in an on FAPESP (Temático) Grant project. Thus, beside the expected gains with the exchange of researchers and students, we will benefit from the exchange of notable expertise in this area. (AU)

Publicações científicas

(Referências obtidas automaticamente do Web of Science e do SciELO, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores)

HOYE, ROBERT L. Z.; SCHULZ, PHILIP; SCHELHAS, LAURA T.; HOLDER, AARON M.; STONE, KEVIN H.; PERKINS, JOHN D.; VIGIL-FOWLER, DEREK; SIOL, SEBASTIAN; SCANLON, DAVID O.; ZAKUTAYEV, ANDRIY; et al. Perovskite-Inspired Photovoltaic Materials: Toward Best Practices in Materials Characterization and Calculations. Chemistry of Materials, v. 29, n. 5, p. 1964-1988, MAR 14 2017. (12/10127-5, 14/50718-8)

HOYE, ROBERT L. Z.; SCHULZ, PHILIP; SCHELHAS, LAURA T.; HOLDER, AARON M.; STONE, KEVIN H.; PERKINS, JOHN D.; VIGIL-FOWLER, DEREK; SIOL, SEBASTIAN; SCANLON, DAVID O.; ZAKUTAYEV, ANDRIY; et al. Perovskite-Inspired Photovoltaic Materials: Toward Best Practices in Materials Characterization and Calculations. CHEMISTRY OF MATERIALS, v. 29, n. 5, p. 25-pg., 2017-03-14. (14/50718-8, 12/10127-5)