| Texto completo | |
| Autor(es): |
Número total de Autores: 4
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| Afiliação do(s) autor(es): | [1] Lab Nacl Nanotecnol LNNano CNPEM, BR-13083100 Campinas, SP - Brazil
[2] Univ Fed Vicosa, Dept Fis, BR-36570000 Vicosa, MG - Brazil
[3] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG - Brazil
Número total de Afiliações: 3
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| Tipo de documento: | Artigo Científico |
| Fonte: | Journal of Crystal Growth; v. 425, p. 39-42, SEP 1 2015. |
| Citações Web of Science: | 1 |
| Resumo | |
Partly released InGaAs layers forming a wrinkled network are used as templates for InAs growth. A systematic growth study was carried out, where InAs amounts from 0 ML to 3 ML were deposited on the patterned samples. The material migration during growth is evaluated by distinct microscopy techniques. We find a systematic accumulation of the deposited material on the released, wrinkled areas of the sample, whereas no material accumulation or formation of three-dimensional nanostructures is observed on the unreleased areas of the sample. (C) 2015 Elsevier B.V. All rights reserved. (AU) | |
| Processo FAPESP: | 11/22945-1 - Crescimento epitaxial sobre membranas semicondutoras auto-suportadas |
| Beneficiário: | Christoph Friedrich Deneke |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |