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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Overgrowth of wrinkled InGaAs membranes using molecular beam epitaxy

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Author(s):
Filipe Covre da Silva, S. [1, 2] ; Lanzoni, E. M. [1] ; Malachias, A. [3] ; Deneke, Ch. [1]
Total Authors: 4
Affiliation:
[1] Lab Nacl Nanotecnol LNNano CNPEM, BR-13083100 Campinas, SP - Brazil
[2] Univ Fed Vicosa, Dept Fis, BR-36570000 Vicosa, MG - Brazil
[3] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG - Brazil
Total Affiliations: 3
Document type: Journal article
Source: Journal of Crystal Growth; v. 425, p. 39-42, SEP 1 2015.
Web of Science Citations: 1
Abstract

Partly released InGaAs layers forming a wrinkled network are used as templates for InAs growth. A systematic growth study was carried out, where InAs amounts from 0 ML to 3 ML were deposited on the patterned samples. The material migration during growth is evaluated by distinct microscopy techniques. We find a systematic accumulation of the deposited material on the released, wrinkled areas of the sample, whereas no material accumulation or formation of three-dimensional nanostructures is observed on the unreleased areas of the sample. (C) 2015 Elsevier B.V. All rights reserved. (AU)

FAPESP's process: 11/22945-1 - Overgrowth of free-standing semiconductor membranes
Grantee:Christoph Friedrich Deneke
Support Opportunities: Regular Research Grants