Abstract
Free-standing semiconductor membranes have attracted a great attention in the last years. Recently, it was shown that they can be used as compliant substrate for the growth of self-assembled nanosturctures, e. g. self-assembled islands of Ge. In this project, we want to establish the method of molecular beam epitaxy (MBE) growthof self-assembled InAs islands on free-standing membranes for two material systems (InAs on Si and InAs on GaAs). Both materials systems are chosen because of their fundamental character as well as their application in various (opto-)electronic devices. As the growth of these material combinations is highly influenced by stress and strain between substrate and deposited material, a compliant substrate (a free-standing membrane) will massively influence the growth behavior. The material combination InAs on Si is a typical example of an III-V semiconductor grown on a group IV material. The integration of III-V compounds is consider a promising candidate for integration of opto-electronic devices into silicon device technology. Our preliminary results indicate a fundamental change in the overgrowth behavior regarding the substrate wetting and the island formation. Detailed studies should be carried out using the existing growth and characterization facilities of our group to gain full understanding of the growth system. Furthermore, overgrowth of free-standing GaAs membranes with InAs should be carried out. The InAs/GaAs material combination is not only of basic research interest, but also use for device application as lasers diodes or elements for quantum computing (qbits). The main objective of the project is to investigate the MBE growth on a novel class of compliant substrates offering a different growth strategy for obtaining nanostructures by self-assembly. In this way, it will contribute to the development of electrical and opto-electronic devices based on this technology. (AU)
Scientific publications
(5)
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
MARCAL, L. A. B.;
RICHARD, M. -I.;
MAGALHAES-PANIAGO, R.;
CAVALLO, F.;
LAGALLY, M. G.;
SCHMIDT, O. G.;
SCHUELLI, T. UE.;
DENEKE, CH.;
MALACHIAS, ANGELO.
Direct evidence of strain transfer for InAs island growth on compliant Si substrates.
Applied Physics Letters,
v. 106,
n. 15
APR 13 2015.
Web of Science Citations: 2.
BERNARDES MARCAL, LUCAS ATILA;
TEIXEIRA ROSA, BARBARA LUIZA;
SAFAR, GUSTAVO A. M.;
FREITAS, RAUL O.;
SCHMIDT, OLIVER G.;
SOARES GUIMARAES, PAULO SERGIO;
DENEKE, CHRISTOPH;
MALACHIAS, ANGELO.
Observation of Emission Enhancement Caused by Symmetric Carrier Depletion in III-V Nanomembrane Heterostructures.
ACS PHOTONICS,
v. 1,
n. 9,
p. 863-870,
SEP 2014.
Web of Science Citations: 5.
DENEKE, CHRISTOPH;
MALACHIAS, ANGELO;
RASTELLI, ARMANDO;
MERCES, LEANDRO;
HUANG, MINGHUANG;
CAVALLO, FRANCESCA;
SCHMIDT, OLIVER G.;
LAGALLY, MAX G.
Straining Nanomembranes via Highly Mismatched Heteroepitaxial Growth: In As Islands on Compliant Si Substrates.
ACS NANO,
v. 6,
n. 11,
p. 10287-10295,
NOV 2012.
Web of Science Citations: 18.