Identification of the Chemical Bonding Prompting Adhesion of a-C:H Thin Films on Ferrous Alloy Intermediated by a SiCx:H Buffer Layer

Autor(es)

Cemin, F. ^[1] ; Bim, L. T. ^[1] ; Leidens, L. M. ^[1] ; Morales, M. ^[2] ; Baumvol, I. J. R. ^[3] ; Alvarez, F. ^[2] ; Figueroa, C. A. ^{[1, 4]}

Afiliação do(s) autor(es)

^[1] Univ Caldas do Sul, Ctr Ciencias Exatas & Tecnol, BR-95070560 Caxias Do Sul, RS - Brazil

^[2] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP - Brazil

^[3] Univ Fed Rio Grande do Sul, Inst Fis, BR-91509970 Porto Alegre, RS - Brazil

^[4] Plasmar Tecnol Ltda, BR-95030775 Caxias Do Sul, RS - Brazil

• Tipo de documento: Artigo Científico
• Fonte: ACS APPLIED MATERIALS & INTERFACES; v. 7, n. 29, p. 15909-15917, JUL 29 2015.
• Citações Web of Science: 21

Resumo

Amorphous carbon (a-C) and several related materials (DLCs) may have ultralow friction coefficients that can be used for saving-energy applications. However, poor chemical bonding of a-C/DLC films on metallic alloys is expected, due to the stability of carbon-carbon bond's. Silicon-based intermediate layers are employed to enhance the adherence of a-C:H films on ferrous alloys, although the role of such buffer layers is not yet fully understood in chemical terms. The chemical bonding of a-C:H thin films on ferrous alloy intermediated by a nanometric SiCx:H buffer layer was analyzed by X-ray photoelectron spectroscopy (XPS): The chemical profile was inspected by glow discharge optical emission spectroscopy (GDOES), and the chemical structure was evaluated by Raman and Fourier transform infrared spectroscopy techniques. The nature of adhesion is discussed by analyzing the chemical bonding at the interfaces of the a-C:H/SiCx:H/ferrous alloy sandwich structure. The adhesion phenomenon is ascribed to specifically chemical bonding character at the buffer layer. Whereas carbon carbon (C-C) and carbon silicon (C-Si) bonds are formed at the outermost interface, the innermost interface is constituted mainly by silicon iron (Si-Fe) bonds. The oxygen presence degrades the adhesion up to totally delaminate the a-C:H thin films. The SiCx:H deposition temperature determines the type of chemical bonding and the amount of oxygen contained in the buffer layer. (AU)

• Processo FAPESP: 12/10127-5 - Pesquisa e desenvolvimento de materiais nanoestruturados para aplicações eletrônicas e de física de superfícies
• Beneficiário: Fernando Alvarez
• Modalidade de apoio: Auxílio à Pesquisa - Temático