| Texto completo | |
| Autor(es): |
Assali, S.
[1]
;
Gagliano, L.
[1]
;
Oliveira, D. S.
[2]
;
Verheijen, M. A.
[1, 3]
;
Pissard, S. R.
[4]
;
Feiner, L. F.
[1]
;
Bakkers, E. P. A. M.
[1, 5]
Número total de Autores: 7
|
| Afiliação do(s) autor(es): | [1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven - Netherlands
[2] Univ Estadual Campinas, UNICAMP, Inst Fis Gleb Wataghin, BR-13083859 Sao Paulo - Brazil
[3] Philips Innovat Serv Eindhoven, NL-5656 AE Eindhoven - Netherlands
[4] Univ Toulouse, CNRS, LAAS, F-31400 Toulouse - France
[5] Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft - Netherlands
Número total de Afiliações: 5
|
| Tipo de documento: | Artigo Científico |
| Fonte: | Nano Letters; v. 15, n. 12, p. 8062-8069, DEC 2015. |
| Citações Web of Science: | 35 |
| Resumo | |
The growth of wurtzite/zincblende (WZ and ZB, respectively) superstructures opens new avenues for band structure engineering and holds the promise of digitally controlling the energy spectrum of quantum confined systems. Here, we study growth kinetics of pure and thus defect-free WZ/ZB homostructures in GaP nanowires with the aim to obtain monolayer control of the ZB and WZ segment lengths. We find that the Ga concentration and the supersaturation in the catalyst particle are the key parameters determining growth kinetics. These parameters can be tuned by the gallium partial pressure and the temperature. The formation of WZ and ZB can be understood with a model based on nucleation either at the triple phase line for the WZ phase or in the center of the solid liquid interface for the ZB phase. Furthermore, the observed delay/offset time needed to induce WZ and ZB growth after growth of the other phase can be explained within this framework. (AU) | |
| Processo FAPESP: | 13/24902-3 - Propriedades termoelétricas de nanofios semicondutores |
| Beneficiário: | Douglas Soares de Oliveira |
| Modalidade de apoio: | Bolsas no Exterior - Estágio de Pesquisa - Doutorado |