Spin polarization of carriers in resonant tunneling devices containing InAs self-assembled quantum dots

Autor(es)

Araujo e Nobrega, J. ^[1] ; Orsi Gordo, V. ^[1] ; Galeti, H. V. A. ^[2] ; Galvao Gobato, Y. ^[1] ; Brasil, M. J. S. P. ^[3] ; Taylor, D. ^[4] ; Orlita, M. ^[5] ; Henini, M. ^[4]

Afiliação do(s) autor(es)

^[1] Univ Fed Sao Carlos, Dept Fis, BR-13560905 Sao Carlos, SP - Brazil

^[2] Univ Fed Sao Carlos, Dept Engn Eletr, BR-13560905 Sao Carlos, SP - Brazil

^[3] Univ Estadual Campinas, UNICAMP, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP - Brazil

^[4] Univ Nottingham, Nottingham Nanotechnol & Nanosci Ctr, Sch Phys & Astron, Nottingham NG7 2RD - England

^[5] CNRS, Lab Natl Champs Magnet Intenses, F-38042 Grenoble 9 - France

• Tipo de documento: Artigo Científico
• Fonte: SUPERLATTICES AND MICROSTRUCTURES; v. 88, p. 574-581, DEC 2015.
• Citações Web of Science: 2

Resumo

In this work, we have investigated transport and optical properties of n-i-n resonant tunneling diodes (RTDs) containing a layer of InAs self-assembled quantum dots (QDs) grown on a (311)B oriented GaAs substrate. Polarization-resolved photoluminescence (PL) and magneto-transport measurements were performed under applied voltage and magnetic fields up to 15 T at 2 K under linearly polarized laser excitation. It was observed that the QD circular polarization degree depends strongly on the applied voltage. Its voltage dependence is explained by the formation of excitonic complexes such as positively (X+) and negatively (X-) charged excitons in the QDs. Our results demonstrate an effective electrical control of an ensemble of InAs QD properties by tuning the applied voltage across a RID device into the resonant tunneling condition. (C) 2015 Elsevier Ltd. All rights reserved. (AU)

• Processo FAPESP: 12/24055-6 - Propriedades óticas, elétricas e de spin de nanoestruturas e nanodispositivos semicondutores
• Beneficiário: Yara Galvão Gobato
• Modalidade de apoio: Auxílio à Pesquisa - Regular