| Texto completo | |
| Autor(es): Mostrar menos - |
do Nascimento Vasconcelos, Hugo Menezes
[1, 2]
;
Eddrief, Mahmoud
[1]
;
Zheng, Yunlin
[1]
;
Demaille, Dominique
[1]
;
Hidki, Sarah
[1]
;
Fonda, Emiliano
[3]
;
Novikova, Anastasiia
[3]
;
Fujii, Jun
[4]
;
Torelli, Piero
[4]
;
Salles, Benjamin Rache
[5, 4]
;
Vobornik, Ivana
[4]
;
Panaccione, Giancarlo
[4]
;
Aparecido de Oliveira, Adilson Jesus
[2]
;
Marangolo, Massimiliano
[1]
;
Vidal, Franck
[1]
Número total de Autores: 15
|
| Afiliação do(s) autor(es): | [1] Univ Paris 06, Univ Paris 04, CNRS UMR 7588, Inst NanoSci Paris, F-75005 Paris - France
[2] Univ Fed Sao Carlos, Dept Fis, CP 676, BR-13565905 Sao Carlos, SP - Brazil
[3] LOrme Merisiers St Aubin, Synchrotron Soleil, BP 48, F-91192 Gif Sur Yvette - France
[4] Lab TASC, Ist Officina Mat IOM, CNR, Area Sci Pk, SS 14, Km 163-5, I-34149 Trieste - Italy
[5] Univ Fed Rio de Janeiro, Inst Fis, BR-21941972 Rio De Janeiro, RJ - Brazil
Número total de Afiliações: 5
|
| Tipo de documento: | Artigo Científico |
| Fonte: | ACS NANO; v. 10, n. 1, p. 1132-1138, JAN 2016. |
| Citações Web of Science: | 7 |
| Resumo | |
We investigated the structural, magnetic, and electronic properties of Bi2Se3 epilayers containing Fe grown on GaAs(111) by molecular beam epitaxy. It is shown that, in the window of growth parameters leading to Bi2Se3 epilayers with optimized quality, Fe atom clustering leads to the formation of FexSey inclusions. These objects have platelet shape and are embedded within Bi2Se3. Monoclinic Fe3Se4 is identified as the main secondary phase through detailed structural measurements. Due to the presence of the hard ferrimagnetic Fe3Se4 inclusions, the system exhibits a very large coercive field at low temperature and room temperature magnetic ordering. Despite this composite structure and the proximity of a magnetic phase, the surface electronic structure of Bi2Se3 is preserved, as shown by the persistence of a gapless Dirac cone at Gamma. (AU) | |
| Processo FAPESP: | 14/50149-3 - Investigation of Multiferroic Materials and Topological Insulators |
| Beneficiário: | Adilson Jesus Aparecido de Oliveira |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |