Optoelectronic characteristics of single InP nanowire grown from solid source

Autor(es)

Kamimura, H. ^[1] ; Dalmaschio, C. J. ^[2] ; Carrocine, S. C. ^[1] ; Rodrigues, A. D. ^[1] ; Gouveia, R. C. ^[3] ; Leite, E. R. ^[4] ; Chiquito, A. J. ^[1]

Afiliação do(s) autor(es)

^[1] Univ Fed Sao Carlos, Dept Fis, NanO LaB, CP 676, BR-13565905 Sao Carlos, SP - Brazil

^[2] Univ Fed Espirito Santo, Dept Ciencias Nat, BR-29932540 Sao Mateus, ES - Brazil

^[3] Inst Fed Educ Ciencia & Tecnol Sao Paulo, BR-14169263 Sertaozinho, SP - Brazil

^[4] Univ Fed Sao Carlos, Dept Quim, Lab Interdisciplinar Eletroquim & Ceram, BR-13566590 Sao Carlos, SP - Brazil

• Tipo de documento: Artigo Científico
• Fonte: MATERIALS RESEARCH EXPRESS; v. 2, n. 4 APR 2015.
• Citações Web of Science: 0

Resumo

InP nanowires were synthesized on quartz substrates via vapour phase deposition using gold seeds and solid source. The properties of the InP nanowires were investigated by x-ray diffraction, scanning electronic microscopy (FEG-SEM) and high resolution transmission electron microscopy demonstrating micrometric lengths and diameter distribution ranging from 40 to 100 nm with crystalline core. Photo-current on-off characteristics were obtained from single nanowire devices, presenting a delay of a few seconds in the current decay when the illumination is turned off. This time is much larger than some usual microseconds decays and may be caused by localized states whose presence was confirmed by thermally stimulated current TSC measurements. (AU)

• Processo FAPESP: 12/06916-4 - Síntese e propriedades de transporte eletrônico em nanofios semicondutores
• Beneficiário: Hanay Kamimura
• Modalidade de apoio: Bolsas no Brasil - Doutorado