Effects of crossed electric and magnetic fields on the interband optical absorption spectra of variably spaced semiconductor superlattices

Autor(es)

Zuleta, J. N. ^[1] ; Reyes-Gomez, E. ^[1]

Afiliação do(s) autor(es)

^[1] Univ Antioquia UdeA, Inst Fis, Calle 70 52-21, Medellin - Colombia

• Tipo de documento: Artigo Científico
• Fonte: PHYSICA B-CONDENSED MATTER; v. 488, p. 72-82, MAY 1 2016.
• Citações Web of Science: 2

Resumo

The interband optical absorption spectra of a GaAs-Ga1-xAlxAs variably spaced semiconductor super lattice under crossed in-plane magnetic and growth-direction applied electric fields are theoretically investigated. The electronic structure, transition strengths and interband absorption coefficients are analyzed within the weak and strong magnetic-field regimes. A dramatic quenching of the absorption coefficient is observed, in the weak magnetic-field regime, as the applied electric field is increased, in good agreement with previous experimental measurements performed in a similar system under growth-direction applied electric fields. A decrease of the resonant tunneling in the superlattice is also theoretically obtained in the strong magnetic-field regime. Moreover, in this case, we found an interband absorption coefficient weakly dependent on the applied electric field. Present theoretical results suggest that an in-plane magnetic field may be used to tune the optical properties of variably spaced semiconductor superlattices, with possible future applications in solar cells and magneto-optical devices. (C) 2016 Elsevier B.V. All rights reserved. (AU)

• Processo FAPESP: 13/21320-3 - A física de novos materiais: fotônica, estrutura de bandas fotônicas, controle do gap fotônico em estruturas fotônicas, polaritons de plasmons, e gap sólitons
• Beneficiário: Luiz Eduardo Moreira Carvalho de Oliveira
• Modalidade de apoio: Auxílio à Pesquisa - Pesquisador Visitante - Internacional