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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

Effects of crossed electric and magnetic fields on the interband optical absorption spectra of variably spaced semiconductor superlattices

Texto completo
Autor(es):
Zuleta, J. N. [1] ; Reyes-Gomez, E. [1]
Número total de Autores: 2
Afiliação do(s) autor(es):
[1] Univ Antioquia UdeA, Inst Fis, Calle 70 52-21, Medellin - Colombia
Número total de Afiliações: 1
Tipo de documento: Artigo Científico
Fonte: PHYSICA B-CONDENSED MATTER; v. 488, p. 72-82, MAY 1 2016.
Citações Web of Science: 2
Resumo

The interband optical absorption spectra of a GaAs-Ga1-xAlxAs variably spaced semiconductor super lattice under crossed in-plane magnetic and growth-direction applied electric fields are theoretically investigated. The electronic structure, transition strengths and interband absorption coefficients are analyzed within the weak and strong magnetic-field regimes. A dramatic quenching of the absorption coefficient is observed, in the weak magnetic-field regime, as the applied electric field is increased, in good agreement with previous experimental measurements performed in a similar system under growth-direction applied electric fields. A decrease of the resonant tunneling in the superlattice is also theoretically obtained in the strong magnetic-field regime. Moreover, in this case, we found an interband absorption coefficient weakly dependent on the applied electric field. Present theoretical results suggest that an in-plane magnetic field may be used to tune the optical properties of variably spaced semiconductor superlattices, with possible future applications in solar cells and magneto-optical devices. (C) 2016 Elsevier B.V. All rights reserved. (AU)

Processo FAPESP: 13/21320-3 - A física de novos materiais: fotônica, estrutura de bandas fotônicas, controle do gap fotônico em estruturas fotônicas, polaritons de plasmons, e gap sólitons
Beneficiário:Luiz Eduardo Moreira Carvalho de Oliveira
Linha de fomento: Auxílio à Pesquisa - Pesquisador Visitante - Internacional