Effects of crossed electric and magnetic fields on the interband optical absorption spectra of variably spaced semiconductor superlattices

Author(s)

Zuleta, J. N. ^[1] ; Reyes-Gomez, E. ^[1]

Affiliation

^[1] Univ Antioquia UdeA, Inst Fis, Calle 70 52-21, Medellin - Colombia

• Document type: Journal article
• Source: PHYSICA B-CONDENSED MATTER; v. 488, p. 72-82, MAY 1 2016.
• Web of Science Citations: 2

Abstract

The interband optical absorption spectra of a GaAs-Ga1-xAlxAs variably spaced semiconductor super lattice under crossed in-plane magnetic and growth-direction applied electric fields are theoretically investigated. The electronic structure, transition strengths and interband absorption coefficients are analyzed within the weak and strong magnetic-field regimes. A dramatic quenching of the absorption coefficient is observed, in the weak magnetic-field regime, as the applied electric field is increased, in good agreement with previous experimental measurements performed in a similar system under growth-direction applied electric fields. A decrease of the resonant tunneling in the superlattice is also theoretically obtained in the strong magnetic-field regime. Moreover, in this case, we found an interband absorption coefficient weakly dependent on the applied electric field. Present theoretical results suggest that an in-plane magnetic field may be used to tune the optical properties of variably spaced semiconductor superlattices, with possible future applications in solar cells and magneto-optical devices. (C) 2016 Elsevier B.V. All rights reserved. (AU)

• FAPESP's process: 13/21320-3 - The physics of novel materials: photonics, photonic band structure, control of photonic band gap in photonic structures, plasmon polaritons, and gap solitons
• Grantee: Luiz Eduardo Moreira Carvalho de Oliveira
• Support Opportunities: Research Grants - Visiting Researcher Grant - International