Solid-Vapor Reaction Growth of Transition-Metal Dichalcogenide Monolayers

Autor(es):Mostrar menos -

Li, Bo ; Gong, Yongji ; Hu, Zhili ; Brunetto, Gustavo ; Yang, Yingchao ; Ye, Gonglan ; Zhang, Zhuhua ; Lei, Sidong ; Jin, Zehua ; Bianco, Elisabeth ; Zhang, Xiang ; Wang, Weipeng ; Lou, Jun ; Galvao, Douglas S. ; Tang, Ming ; Yakobson, Boris I. ; Vajtai, Robert ; Ajayan, Pulickel M.

• Tipo de documento: Artigo Científico
• Fonte: ANGEWANDTE CHEMIE-INTERNATIONAL EDITION; v. 55, n. 36, p. 10656-10661, AUG 26 2016.
• Citações Web of Science: 12

Resumo

Two-dimensional (2D) layered semiconducting transition-metal dichalcogenides (TMDCs) are promising candidates for next-generation ultrathin, flexible, and transparent electronics. Chemical vapor deposition (CVD) is a promising method for their controllable, scalable synthesis but the growth mechanism is poorly understood. Herein, we present systematic studies to understand the CVD growth mechanism of monolayer MoSe2, showing reaction pathways for growth from solid and vapor precursors. Examination of metastable nanoparticles deposited on the substrate during growth shows intermediate growth stages and conversion of non-stoichiometric nanoparticles into stoichiometric 2D MoSe2 monolayers. The growth steps involve the evaporation and reduction of MoO3 solid precursors to sub-oxides and stepwise reactions with Se vapor to finally form MoSe2. The experimental results and proposed model were corroborated by abinitio Car-Parrinello molecular dynamics studies. (AU)

• Processo FAPESP: 13/08293-7 - CECC - Centro de Engenharia e Ciências Computacionais
• Beneficiário: Munir Salomao Skaf
• Modalidade de apoio: Auxílio à Pesquisa - Centros de Pesquisa, Inovação e Difusão - CEPIDs