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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

Thermal Treatment Effects on Electrodeposited Sb2Se3 Photovoltaic Thin Films

Texto completo
Autor(es):
Costa, Magno Barcelos [1] ; de Souza Lucas, Francisco Willian [1] ; Mascaro, Lucia Helena [1]
Número total de Autores: 3
Afiliação do(s) autor(es):
[1] Univ Fed Sao Carlos, Rd Washington Luiz, Km 235, BR-13565905 Sao Carlos, SP - Brazil
Número total de Afiliações: 1
Tipo de documento: Artigo Científico
Fonte: CHEMELECTROCHEM; v. 4, n. 10, p. 2507-2514, OCT 2017.
Citações Web of Science: 7
Resumo

Antimony selenide thin films were prepared through potentiostatic co-electrodeposition by applying -0.6V from a bath composed of 2.5 mM K(SbO)C(4)H(4)O(6)0.5 H2O and 2.0 mM SeO2 in a supporting electrolyte of 0.5M Na2SO4/H2SO4 at pH 2. The films were subjected to different thermal treatment (TT) conditions under a Se-(vapor)/N-2 atmosphere. Cyclic voltammetry was used to evaluate the electrochemical process of each element separately as well as the binary system on Pt and FTO working electrodes. The morphology, composition, band gap, crystallography, and photoactivity toward hydrogen gas production of the films were evaluated as a function of TT conditions, in order to obtain insight into their effects on film properties. Under all conditions, the films showed homogeneous and rough surfaces and a stoichiometric Sb2Se3 composition. The non-thermal-treated film was non-crystalline, whereas after TT, all films showed a pure orthorhombic Sb2Se3 phase. It was observed that the crystallographic texturization of films in the (120) plane, caused by some TT conditions, is detrimental to the photoactivity. At the optimized TT conditions (300 degrees C for 3h), the film presented good crystallographic and optoelectronic properties and photoactivity, with a photocurrent value of 168.15 mu A cm(-2) (at the standard hydrogen gas evolution potential) and a band gap of around 1.1eV. (AU)

Processo FAPESP: 16/10513-3 - Preparação e aplicação de materiais eletródicos nanoestruturados em Eletro/fotoeletrocatálise sob regime de fluxo contínuo: uma nova abordagem para síntese e funcionalização de sistemas heterocíclicos
Beneficiário:Francisco Willian de Souza Lucas
Linha de fomento: Bolsas no Brasil - Pós-Doutorado
Processo FAPESP: 13/07296-2 - CDMF - Centro de Desenvolvimento de Materiais Funcionais
Beneficiário:Elson Longo da Silva
Linha de fomento: Auxílio à Pesquisa - Centros de Pesquisa, Inovação e Difusão - CEPIDs