Influence of Si Coating on Interfacial Microstructure of Laser Joining of Titanium and Aluminium Alloys

Autor(es)

Aline Capella de Oliveira ^[1] ; André Felipe Ribeiro Moreira ^[2] ; Carina Barros Mello ^[3] ; Rudimar Riva ^[4] ; Rogério de Moraes Oliveira ^[5]

Afiliação do(s) autor(es)

^[1] Univ Fed Sao Paulo, Inst Ciencia & Tecnol, Sao Jose Dos Campos, SP - Brazil

^[2] Universidade Federal de São Paulo. Instituto de Ciência e Tecnologia - Brasil

^[3] Inst Nacl Pesquisas Espaciais, Av Astronautas 1-758, Sao Jose Dos Campos, SP - Brazil

^[4] Inst Estudos Avancados, Trevo Coronel Aviador Jose Alberto Albano Amarant, Sao Jose Dos Campos, SP - Brazil

^[5] Instituto Nacional de Pesquisas Espaciais - Brasil

• Tipo de documento: Artigo Científico
• Fonte: MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS; v. 21, n. 1 2017-11-09.

Resumo

A common phenomenon in the dissimilar joints is the presence of brittle compounds in the joining interface region. The brittle phases can decrease by introduction of interlayers in the joining interface, such as silicon, that inhibits the formation of Al3Ti and AlTi3 phases in joining process between titanium and aluminium alloys. In the present work, the joining of titanium and aluminium alloys have been carried out using a Yb:fiber laser, considering the prior silicon film deposited on titanium alloy interface by DC magnetron sputtering. Butt joint conditions were maintained constant: laser average power, process speed and beam positioning along the interface joining toward aluminium alloy (1200 W, 3.0 m/min and 0.3 mm, respectively). Metallographic analyses were carried out on the cross-section joint by optical and electronic microscopies. When the melted aluminium alloy wet the solid-state titanium alloy, a more restrict compound layer was formed in the joining interface. EDS line scanning in the joining interface showed a reduction of compound layer thickness, considering the silicon as interlayer, reaching the mean value of 3 µm, i.e., up to five times thinner if compared to joining without silicon during the process. (AU)

• Processo FAPESP: 15/18235-0 - Formação e crescimento de intermetálicos na interface entre Al-Si e Ti-6Al-4V
• Beneficiário: Aline Gonçalves Capella
• Modalidade de apoio: Auxílio à Pesquisa - Regular