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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

A quantitative tool to establish magic number clusters, epsilon(3), applied in small silicon clusters, Si2-11

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Autor(es):
Fernandes, Gabriel F. S. [1] ; Machado, Francisco B. C. [1] ; Ferrao, Luiz F. A. [1]
Número total de Autores: 3
Afiliação do(s) autor(es):
[1] Inst Tecnol Aeronaut, Dept Quim, BR-12228900 Sao Jose Dos Campos, SP - Brazil
Número total de Afiliações: 1
Tipo de documento: Artigo Científico
Fonte: Journal of Molecular Modeling; v. 24, n. 8 AUG 2018.
Citações Web of Science: 3
Resumo

The present work focuses on establishing a function to rank the stability of small silicon clusters to characterize their magic numbers. This function is composed by a thermodynamic descriptor, the atomization Gibbs free energy, and indirect kinetic descriptors, the highest occupied molecular orbital energy and the lowest excitation energy of each system. The silicon clusters geometries were optimized using density functional theory within a hybrid meta-GGA approximation (M06), while the electronic energy was corrected by single-point calculation using CASPT2 level of theory to obtain the molecular properties. Both methodologies were combined with polarized diffused triple zeta, 6-311++G(3df,3pd), basis set for all atoms. Some molecular properties and their combinations were considered to create the aforementioned function to represent the clusters chemical stability and their magic numbers. The chosen stability ranking function, called epsilon(3), presents results in agreement with the previous mass spectrometry experimental data identifying 4, 6, 7 and 10 as magic numbers for small silicon clusters. We believe this stability ranking function can be useful to study other intramolecular atomic and molecular clusters. (AU)

Processo FAPESP: 17/07707-3 - Estados excitados e natureza poliradicalar de poliacenos e periacenos
Beneficiário:Francisco Bolivar Correto Machado
Modalidade de apoio: Auxílio à Pesquisa - Regular
Processo FAPESP: 17/01359-3 - Estabilidade e estrutura eletrônica de superátomos de silício dopados com alumínio e fósforo
Beneficiário:Gabriel Freire Sanzovo Fernandes
Modalidade de apoio: Bolsas no Brasil - Mestrado