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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

Molecular modeling of low bandgap diblock co-oligomers with pi-bridges for applications in photovoltaics

Texto completo
Autor(es):
Alves, Gabriel G. B. [1, 2] ; Oliveira, Eliezer F. [3] ; Batagin-Neto, Augusto [4] ; Lavarda, Francisco C. [1]
Número total de Autores: 4
Afiliação do(s) autor(es):
[1] Univ Estadual Paulista Unesp, Fac Ciencias, Bauru, SP - Brazil
[2] Univ Estadual Paulista UNESP, Fac Ciencias, POSMAT Programa Posgrad Ciencia & Tecnol Mat, Bauru - Brazil
[3] Univ Estadual Campinas UNICAMP, IFGW, GSONM, Campinas, SP - Brazil
[4] Univ Estadual Paulista UNESP, Campus Expt Itapeva, Itapeva, SP - Brazil
Número total de Afiliações: 4
Tipo de documento: Artigo Científico
Fonte: COMPUTATIONAL MATERIALS SCIENCE; v. 152, p. 12-19, SEP 2018.
Citações Web of Science: 2
Resumo

Recently, the diblock co-oligomers concept, a new design method to obtain conjugated organic compounds for varied applications in photovoltaics was proposed. These materials combines the interesting properties of extended systems and the versatility of small molecules, leading to low bandgap materials with improved properties, such as adjustable open circuit voltages and promising optical responses. Aiming to evaluate possible improved routes for the design of such materials, in this report we present a study on the effect of pi-bridges incorporation on the properties of diblock co-oligomers. Six different p-bridges were inserted between polythiofene (Th) and polypyrrol (Py) oligomers with five units, following the structure {[}Th](5)-{[}pi-bridge]-{[}Py](5). The geometry optimization and optical absorption studies were carried out in the density functional theory (DFT) and time dependent-DFT (TD-DFT) frameworks, respectively, using the B3LYP correlation-exchange functional and 6-31G(d, p) basis set. The results point out that compounds with improved opto-electronic properties can be obtained by an appropriated choice of the pi-bridges. The possible improvements are associated with the higher delocalization of the pi-systems on the molecules, reduction of the effective optical/electronic bandgaps, high optical transition probability between the new highest occupied and lowest unoccupied molecular levels (HOMO-LUMO), optimized charge transport properties and reduced exciton dissociation energies. (AU)

Processo FAPESP: 16/18499-0 - Investigação de propriedades estruturais, mecânicas e funcionais de nanoestruturas de carbono
Beneficiário:Eliezer Fernando de Oliveira
Linha de fomento: Bolsas no Brasil - Pós-Doutorado
Processo FAPESP: 12/21983-0 - Estrutura eletrônica de materiais orgânicos para aplicações em camadas ativas de células solares
Beneficiário:Eliezer Fernando de Oliveira
Linha de fomento: Bolsas no Brasil - Doutorado
Processo FAPESP: 14/20410-1 - Estrutura eletrônica de materiais orgânicos para aplicações em camadas ativas de células solares
Beneficiário:Francisco Carlos Lavarda
Linha de fomento: Auxílio à Pesquisa - Regular