Band gap tuning of layered III-Te materials

Autor(es)

Anahi Olmos-Asar, Jimena ^{[1, 2]} ; Leao, Cedric Rocha ^[1] ; Fazzio, Adalberto ^[3]

Afiliação do(s) autor(es)

^[1] Univ Fed ABC, Santo Andre, SP - Brazil

^[2] Univ Nacl Cordoba, Fac Ciencias Quim, INFIQC, Dept Quim Teor & Computac, CONICET, X5000HUA Cordoba, Cordoba - Argentina

^[3] CNPEM, Brazilian Nanotechnol Natl Lab LNNano, BR-13083970 Campinas, SP - Brazil

• Tipo de documento: Artigo Científico
• Fonte: Journal of Applied Physics; v. 124, n. 4 JUL 28 2018.
• Citações Web of Science: 1

Resumo

Gallium telluride is a layered material with high photoresponse and is very promising for applications in optoelectronic devices such as photovoltaic cells or radiation detectors. We analyze how the properties of thin films of this material scale with its thickness and also study two other proposed materials with the same crystalline structure whose room-temperature stability we verify. We show that electronic band gaps up to 2.16 eV can be obtained by stacking up and/or applying perpendicular electric field to these III-Te monolayers. This form of band gap engineering may be promising for several technological applications. Published by AIP Publishing. (AU)

• Processo FAPESP: 16/12021-0 - Na busca de novos isolantes topológicos
• Beneficiário: Jimena Anahí Olmos Asar
• Modalidade de apoio: Bolsas no Brasil - Pós-Doutorado