Topology Driven g-Factor Tuning in Type-II Quantum Dots

Autor(es):Mostrar menos -

Llorens, J. M. ^[1] ; Lopes-Oliveira, V ^[2] ; Lopez-Richard, V ^[3] ; Cardozo de Oliveira, E. R. ^[3] ; Wewior, L. ^[1] ; Ulloa, J. M. ^[4] ; Teodoro, M. D. ^[3] ; Marques, G. E. ^[3] ; Garcia-Cristobal, A. ^[5] ; Hai, G-Q ^[6] ; Alen, B. ^[1]

Afiliação do(s) autor(es)

^[1] CEI UAM CSIC, CSIC, IMN CNM, Inst Micro & Nanotecnol, Isaac Newton 8, E-28760 Madrid - Spain

^[2] Univ Estadual Mato Grosso do Sul, BR-79804970 Dourados, MS - Brazil

^[3] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP - Brazil

^[4] Univ Politecn Madrid, Inst Syst Based Optoelect & Microtechnol ISOM, Ciudad Univ S-N, E-28040 Madrid - Spain

^[5] Univ Valencia, Inst Ciencia Mat ICMUV, E-46980 Paterna - Spain

^[6] Univ Sao Paulo, Inst Fis Sao Carlos, BR-13560970 Sao Carlos, SP - Brazil

• Tipo de documento: Artigo Científico
• Fonte: PHYSICAL REVIEW APPLIED; v. 11, n. 4 APR 4 2019.
• Citações Web of Science: 1

Resumo

We investigate how the voltage control of the exciton lateral dipole moment induces a transition from singly to doubly connected topology in type-II InAs/GaAsxSb1-x quantum dots. The latter causes visible Aharonov-Bohm oscillations and a change of the exciton g factor, which are modulated by the applied bias. The results are explained in the frame of realistic (k) over right arrow . (p) over right arrow and effective Hamiltonian models and could open a venue for new spin quantum memories beyond the InAs/GaAs realm. (AU)

• Processo FAPESP: 14/02112-3 - Fenômenos ópticos e de transporte em nano-dispositivos
• Beneficiário: Victor Lopez Richard
• Modalidade de apoio: Auxílio à Pesquisa - Regular