| Full text | |
| Author(s): Show less - |
Llorens, J. M.
[1]
;
Lopes-Oliveira, V
[2]
;
Lopez-Richard, V
[3]
;
Cardozo de Oliveira, E. R.
[3]
;
Wewior, L.
[1]
;
Ulloa, J. M.
[4]
;
Teodoro, M. D.
[3]
;
Marques, G. E.
[3]
;
Garcia-Cristobal, A.
[5]
;
Hai, G-Q
[6]
;
Alen, B.
[1]
Total Authors: 11
|
| Affiliation: | [1] CEI UAM CSIC, CSIC, IMN CNM, Inst Micro & Nanotecnol, Isaac Newton 8, E-28760 Madrid - Spain
[2] Univ Estadual Mato Grosso do Sul, BR-79804970 Dourados, MS - Brazil
[3] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP - Brazil
[4] Univ Politecn Madrid, Inst Syst Based Optoelect & Microtechnol ISOM, Ciudad Univ S-N, E-28040 Madrid - Spain
[5] Univ Valencia, Inst Ciencia Mat ICMUV, E-46980 Paterna - Spain
[6] Univ Sao Paulo, Inst Fis Sao Carlos, BR-13560970 Sao Carlos, SP - Brazil
Total Affiliations: 6
|
| Document type: | Journal article |
| Source: | PHYSICAL REVIEW APPLIED; v. 11, n. 4 APR 4 2019. |
| Web of Science Citations: | 1 |
| Abstract | |
We investigate how the voltage control of the exciton lateral dipole moment induces a transition from singly to doubly connected topology in type-II InAs/GaAsxSb1-x quantum dots. The latter causes visible Aharonov-Bohm oscillations and a change of the exciton g factor, which are modulated by the applied bias. The results are explained in the frame of realistic (k) over right arrow . (p) over right arrow and effective Hamiltonian models and could open a venue for new spin quantum memories beyond the InAs/GaAs realm. (AU) | |
| FAPESP's process: | 14/02112-3 - Optical and transport phenomena in nano-devices |
| Grantee: | Victor Lopez Richard |
| Support Opportunities: | Regular Research Grants |