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Spin in semiconductor nanostructures

Grant number:20/07255-8
Support Opportunities:Regular Research Grants
Start date: February 01, 2021
End date: January 31, 2023
Field of knowledge:Physical Sciences and Mathematics - Physics - Condensed Matter Physics
Principal Investigator:Gilmar Eugenio Marques
Grantee:Gilmar Eugenio Marques
Host Institution: Centro de Ciências Exatas e de Tecnologia (CCET). Universidade Federal de São Carlos (UFSCAR). São Carlos , SP, Brazil
City of the host institution:São Carlos
Associated researchers:Euclydes Marega Junior ; Gregory J. Salamo ; José Francisco Miras Domenegueti ; Marcio Daldin Teodoro

Abstract

III-V Semiconductor nanostructures with the incorporation of the antimony element stand out for their strong spin-orbit coupling, which results are interesting for spin physics in optoelectronic experiments. Thanks to the improvement in growth techniques, the recent quality achieved in the growth of these materials has driven attention from the scientific community in this field. This project is therefore dedicated to two lines of research involving antimonides. In the first, structures containing InAs quantum dots followed by the growth of a GaAsSb layer have their optical transitions manipulated according to the content of antimony, in which for specific values, the fundamental transition can be of type-I or II. In this way, the recombination dynamics are controlled with the objective of obtaining relevant results in the spintronic field. In the second topic, we propose the investigation of a the so called plasmonics, in which quantum dots will be the light emitters coupled with a metallic surface for the generation of surface plasmons. Together, these topics cover interesting areas of basic physics research and applications in branches of the spin-photon and plasmonic interface. (AU)

Articles published in Agência FAPESP Newsletter about the research grant:
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Scientific publications
(The scientific publications listed on this page originate from the Web of Science or SciELO databases. Their authors have cited FAPESP grant or fellowship project numbers awarded to Principal Investigators or Fellowship Recipients, whether or not they are among the authors. This information is collected automatically and retrieved directly from those bibliometric databases.)
TRALLERO-GINER, C.; SANTIAGO-PEREZ, D. G.; TKACHENKO, D. V.; MARQUES, G. E.; FOMIN, V. M.. Raman scattering owing to magneto-polaron states in monolayer transition metal dichalcogenides. SCIENTIFIC REPORTS, v. 14, n. 1, p. 9-pg., . (22/08825-8, 23/10905-2, 20/07255-8)
TRALLERO-GINER, C.; SANTIAGO-PEREZ, DARIO G.; VASILEVSKIY, MIKHAIL I.; MARQUES, G. E.. Rydberg Excitons and Doubly Resonant Raman Scattering in Transition-Metal Dichalcogenides. Journal of Physical Chemistry C, v. 128, n. 1, p. 8-pg., . (22/08825-8, 23/10905-2, 20/07255-8)
MENENDEZ-PROUPIN, E.; MORELL, E. SUAREZ; MARQUES, G. E.; TRALLERO-GINER, C.. Lattice vibration modes and electron-phonon interactions in monolayer vs. bilayer of transition metal dichalcogenides. RSC ADVANCES, v. 14, n. 8, p. 14-pg., . (22/08825-8, 23/10905-2, 20/07255-8)