Capacitive Silicon Modulator Design With V-Shaped SiO2 Gate Waveguide to Optimize V-pi x L and Bandwidth Trade-Off

Autor(es)

Dourado, Diego M. ^[1] ; de Fariase, Giovanni B. ^[2] ; Bustamante, Yesica R. R. ^[2] ; Rocha, Monica de L. ^[1] ; Carmo, J. P. ^[1]

Afiliação do(s) autor(es)

^[1] Univ Sao Paulo, Engn Sch Sao Carlos, Elect & Comp Engn Dept, BR-13566590 Sao Carlos, SP - Brazil

^[2] CPqD Fdn, Div Opt Technol, BR-13086902 Campinas, SP - Brazil

• Tipo de documento: Artigo Científico
• Fonte: IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS; v. 26, n. 2 MAR-APR 2020.
• Citações Web of Science: 0

Resumo

This work presents a capacitive modulator design and modeling of a new waveguide architecture using silicon and poly-si technologies. We use a methodology involving the entire lumped-type modulator design process, from the optical design to the small-signal RF analysis. By means of geometric and physical parameters adjustments, the trade-offs among several figures of merit are analyzed in this paper. Due to the waveguide configuration, it is shown that the modulator can improve the trade-off between Vp and bandwidth compared to the state-of-the-art for this kind of device. For instance, the best combinations are Vp 1V@ 20.4GHzandVp = 5.7V@31 GHz, with equivalent optical losses of 3 dB and 1.1 dB, respectively. (AU)

• Processo FAPESP: 16/20615-8 - Tecnologias de Dispositivos Fotônicos para Transceptores ópticos avançados 100Gbps e além
• Beneficiário: Giovanni Benincá de Farias
• Modalidade de apoio: Auxílio à Pesquisa - Regular