| Texto completo | |
| Autor(es): |
da Silva, A. Ferreira
[1, 2]
;
Toloza Sandoval, M. A.
[1]
;
Levine, A.
[3]
;
Levinson, E.
[3]
;
Boudinov, H.
[4]
;
Sernelius, B. E.
[5]
Número total de Autores: 6
|
| Afiliação do(s) autor(es): | [1] Univ Fed Bahia, Inst Fis, BR-40210340 Salvador, BA - Brazil
[2] Univ Sao Paulo, Lab Cristais Ion Filmes Finos & Datacao, Inst Fis, BR-05508090 Butanta, SP - Brazil
[3] Univ Sao Paulo, Lab Novos Mat Semicond, Inst Fis, BR-05508090 Butanta, SP - Brazil
[4] Univ Fed Rio Grande do Sul, Inst Fis, BR-91501970 Porto Alegre, RS - Brazil
[5] Linkoping Univ, Dept Phys Chem & Biol, Div Theory & Modeling, SE-58183 Linkoping - Sweden
Número total de Afiliações: 5
|
| Tipo de documento: | Artigo Científico |
| Fonte: | Journal of Applied Physics; v. 127, n. 4 JAN 31 2020. |
| Citações Web of Science: | 0 |
| Resumo | |
We report here an experimental and theoretical study on the magnetoresistance properties of heavily phosphorous doped germanium on the metallic side of the metal-nonmetal transition. An anomalous regime, formed by negative values of the magnetoresistance, was observed by performing low-temperature measurements and explained within the generalized Drude model, due to the many-body effects. It reveals a key mechanism behind the magnetoresistance properties at low temperatures and, therefore, constitutes a path to its manipulation in such materials of great interest in fundamental physics and technological applications. Published under license by AIP Publishing. (AU) | |
| Processo FAPESP: | 15/16191-5 - Pesquisas em novos materiais envolvendo campos magnéticos intensos e baixas temperaturas |
| Beneficiário: | Gennady Gusev |
| Modalidade de apoio: | Auxílio à Pesquisa - Temático |