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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Heavily n-doped Ge: Low-temperature magnetoresistance properties on the metallic side of the metal-nonmetal transition

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Author(s):
da Silva, A. Ferreira [1, 2] ; Toloza Sandoval, M. A. [1] ; Levine, A. [3] ; Levinson, E. [3] ; Boudinov, H. [4] ; Sernelius, B. E. [5]
Total Authors: 6
Affiliation:
[1] Univ Fed Bahia, Inst Fis, BR-40210340 Salvador, BA - Brazil
[2] Univ Sao Paulo, Lab Cristais Ion Filmes Finos & Datacao, Inst Fis, BR-05508090 Butanta, SP - Brazil
[3] Univ Sao Paulo, Lab Novos Mat Semicond, Inst Fis, BR-05508090 Butanta, SP - Brazil
[4] Univ Fed Rio Grande do Sul, Inst Fis, BR-91501970 Porto Alegre, RS - Brazil
[5] Linkoping Univ, Dept Phys Chem & Biol, Div Theory & Modeling, SE-58183 Linkoping - Sweden
Total Affiliations: 5
Document type: Journal article
Source: Journal of Applied Physics; v. 127, n. 4 JAN 31 2020.
Web of Science Citations: 0
Abstract

We report here an experimental and theoretical study on the magnetoresistance properties of heavily phosphorous doped germanium on the metallic side of the metal-nonmetal transition. An anomalous regime, formed by negative values of the magnetoresistance, was observed by performing low-temperature measurements and explained within the generalized Drude model, due to the many-body effects. It reveals a key mechanism behind the magnetoresistance properties at low temperatures and, therefore, constitutes a path to its manipulation in such materials of great interest in fundamental physics and technological applications. Published under license by AIP Publishing. (AU)

FAPESP's process: 15/16191-5 - The research in new materials involving high magnetic fields and low temperatures
Grantee:Gennady Gusev
Support Opportunities: Research Projects - Thematic Grants