Amorphization of Indirect Band Gap Semiconductors To Tune Their Optoelectronic Properties

Autor(es)

Malyi, I, Oleksandr ; Acosta, Carlos Mera ^{[1, 2]}

Afiliação do(s) autor(es)

^[1] Fed Univ ABC, Ctr Nat & Human Sci, BR-09210580 Santo Andre, SP - Brazil

^[2] Malyi, Oleksandr, I, Univ Colorado, Renewable & Sustainable Energy Inst, Boulder, CO 80309 - USA

• Tipo de documento: Artigo Científico
• Fonte: Journal of Physical Chemistry C; v. 124, n. 27, p. 14432-14438, JUL 9 2020.
• Citações Web of Science: 0

Resumo

Historically, the search for prospective photovoltaic absorbers has been mainly focused on exploring different crystalline compounds having desired optoelectronic properties (e.g., a band gap energy of about 1.3 eV and high absorption coefficient) and composed primarily of inexpensive as well as environmentally friendly elements. In such explorations, special attention has been paid to the study of direct band gap materials or finding a way to make indirect band gap materials direct via doping or nanosizing. Herein, we propose amorphization as an effective way to tune the properties of indirect band gap materials. Specifically, we exemplify the effects for three representative compounds, namely, Si, SnS, and CuBiS2, demonstrating that their electronic structures can be adjusted to the extent of indirect-direct/near-direct band gap transition. More importantly, we reveal transitions at the band edges, which can ultimately help to design that this strategy can cause significant modification of interband a new generation of photovoltaic absorbers. (AU)

• Processo FAPESP: 18/11856-7 - Efeitos induzidos por interfaces em materiais quânticos
• Beneficiário: Carlos Augusto Mera Acosta
• Modalidade de apoio: Bolsas no Brasil - Pós-Doutorado