Incorporation of Europium in Bi2Te3 Topological Insulator Epitaxial Films

Autor(es):Mostrar menos -

Fornari, I, Celso ; Bentmann, Hendrik ^{[1, 2]} ; Morelhao, Sergio L. ^[3] ; Peixoto, Thiago R. F. ^{[1, 2]} ; Rappl, Paulo H. O. ^[4] ; Tcakaev, Abdul-Vakhab ^[5] ; Zabolotnyy, Volodymyr ^[5] ; Kamp, Martin ^{[6, 7]} ; Lee, Tien-Lin ^[8] ; Min, Chul-Hee ^{[1, 2]} ; Kagerer, Philipp ^{[1, 2]} ; Vidal, Raphael C. ^{[1, 2]} ; Isaeva, Anna ^{[9, 10, 11, 12]} ; Ruck, Michael ^{[13, 14, 15]} ; Hinkov, Vladimir ^[5] ; Reinert, Friedrich ^{[1, 2]} ; Abramof, Eduardo ^[4]

Afiliação do(s) autor(es):Mostrar menos -

^[1] Fornari, Celso, I, Univ Wurzburg, Fak Phys & Astron, Expt Phys 7, D-97074 Wurzburg - Germany

^[2] Fornari, Celso, I, Univ Wurzburg, Fak Phys & Astron, Wurzburg Dresden Cluster Excellence Ct Qmat, D-97074 Wurzburg - Germany

^[3] Univ Sao Paulo, Inst Fis, BR-05508090 Sao Paulo - Brazil

^[4] Fornari, Celso, I, Inst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, BR-12245970 Sao Jose Dos Campos, SP - Brazil

^[5] Univ Wurzburg, Expt Phys 4, D-97074 Wurzburg - Germany

^[6] Univ Wurzburg, Fak Phys & Astron, Phys Inst, Wurzburg - Germany

^[7] Univ Wurzburg, Fak Phys & Astron, Rontgen Ctr Complex Mat Syst RCCM, Wurzburg - Germany

^[8] Diamond Light Source, Didcot OX11 0DE, Oxon - England

^[9] Tech Univ Dresden, Fac Phys, D-01062 Dresden - Germany

^[10] Tech Univ Dresden, Wurzburg Dresden Cluster Excellence Ct Qmat, D-01062 Dresden - Germany

^[11] Leibniz IFW Dresden, D-01069 Dresden - Germany

^[12] Wurzburg Dresden Cluster Excellence Ct Qmat, D-01069 Dresden - Germany

^[13] Max Planck Inst Chem Phys Solids, D-01187 Dresden - Germany

^[14] Tech Univ Dresden, Fac Chem & Food Chem, D-01062 Dresden - Germany

^[15] Wurzburg Dresden Cluster Excellence Ct Qmat, D-01187 Dresden - Germany

• Tipo de documento: Artigo Científico
• Fonte: Journal of Physical Chemistry C; v. 124, n. 29, p. 16048-16057, JUL 23 2020.
• Citações Web of Science: 1

Resumo

In the field of topological materials, the interaction between band topology and magnetism remains a current frontier for the advancement of new topological states and spintronic functionalities. Doping with rare-earth elements with large magnetic moments is a current approach to exploit the phenomenology of such interaction. However, dopant solubility into the main matrix plays a major role. In this sense, the present work is focused on elucidating how Eu incorporates into Bi2Te3 lattice as a function of doping. This work reports a systematic investigation of the structural and electronic properties of bismuth telluride epitaxial layers doped with Eu. Bi2Te3 films were grown by molecular beam epitaxy on (111) BaF2 substrates with nominal Eu doping ranging from 0% up to 9%. X-ray diffraction analysis and scanning transmission electron microscopy reveal that Eu atoms enter substitutionally on Bi sites up to 4% of Eu doping. In contrast, the 9% Eu-doped sample contains epitaxially oriented nanoclusters of EuTe. X-ray photoelectron and absorption spectroscopies show that Eu atoms enter the Bi2Te3 crystal matrix in the divalent Eu2+ state for all Eu concentrations. Angle-resolved photoemission experiments indicate that the topological surface state is preserved in the presence of the local magnetic moments introduced by the Eu impurities. (AU)

• Processo FAPESP: 16/22366-5 - Estudo das propriedades do isolante topológico Bi2Te3 crescido por epitaxia de feixe molecular
• Beneficiário: Celso Israel Fornari
• Modalidade de apoio: Bolsas no Brasil - Pós-Doutorado
• Processo FAPESP: 19/01946-1 - Difração e espalhamento de raios-X no estudo de materiais: metodologias avançadas II
• Beneficiário: Sérgio Luiz Morelhão
• Modalidade de apoio: Auxílio à Pesquisa - Regular