Toward Expanding the Optical Response of Ag2CrO4 and Bi2O3 by Their Laser-Mediated Heterojunction

Autor(es):Mostrar menos -

Torres-Mendieta, Rafael Omar ^[1] ; Teixeira, Mayara Mondego ^[2] ; Minguez-Vega, Gladys ^[3] ; de Souza, Daniele ^[4] ; Gobato, Yara Galvao ^[4] ; Assis, Marcelo ^[2] ; Beltran-Mir, Hector ^[5] ; Cordoncillo, Eloisa ^[5] ; Andres, Juan ^[6] ; Cernik, Miroslav ^[1] ; Longo, Elson ^[2]

Afiliação do(s) autor(es)

^[1] Tech Univ Liberec, Inst Nanomat Adv Technol & Innovat, Liberec 46117 - Czech Republic

^[2] Univ Fed Sao Carlos, CDMF UFSCar, BR-13565905 Sao Carlos, SP - Brazil

^[3] Univ Jaume I UJI, Inst Noves Tecnol Imatge INIT, GROC UJI, Castellon de La Plana 12071 - Spain

^[4] Univ Fed Sao Carlos UFSCar, Dept Fis, BR-13565905 Sao Carlos, SP - Brazil

^[5] Univ Jaume I UJI, Dept Inorgan & Organ Chem, Castellon de La Plana 12071 - Spain

^[6] Univ Jaume I UJI, Dept Analyt & Phys Chem, Castellon de La Plana 12071 - Spain

• Tipo de documento: Artigo Científico
• Fonte: Journal of Physical Chemistry C; v. 124, n. 48, p. 26404-26414, DEC 3 2020.
• Citações Web of Science: 0

Resumo

The formation of heterojunctions between semiconductors with distinct properties usually expands their capabilities. In this context, many methodologies have been employed in pursuing efficient and fruitful heterojunctions. However, poor attention has been paid to the employment of photonics-based strategies, which lately demonstrated to have great potential for the structural modification of semiconductors. In the current work, we report the laser-mediated generation of heterojunctions between Ag2CrO4 and Bi2O3, two semiconductors with contrasting properties. The products were prepared by the laser irradiation of different semiconductor's mixture ratios and further analyzed using various electron- and photon-based characterization techniques, different from mechanical grinding, which is considered the most straightforward way to obtain heterojunctions. The laser's intense optical field prompted not only the formation of tight and uniform junctions between the composing semiconductors but also induced Ag and Bi nanoparticles' production on their surfaces. This resulted in a modulation of the optical band gap to the narrowest value found in the semiconductor components and low recombination of the photoinduced charge carriers regardless of the amount ratio of the composing semiconductors. Therefore, this work will be of great importance for the creation of materials with a potential exploitability in the light-powered sectors. (AU)

• Processo FAPESP: 13/07296-2 - CDMF - Centro de Desenvolvimento de Materiais Funcionais
• Beneficiário: Elson Longo da Silva
• Modalidade de apoio: Auxílio à Pesquisa - Centros de Pesquisa, Inovação e Difusão - CEPIDs