50 nm Gate Length FinFET Biosensor & the Outlook for Single-Molecule Detection

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Santermans, S. ; Barge, D. ; Hellings, G. ; Mori, C. B. ; Migacz, K. J. ; Rip, J. ; Spampinato, V ; Vos, R. ; Du Bois, B. ; Chaudhuri, A. R. ; Martino, J. A. ; Heyns, M. ; Severi, S. ; Van Roy, W. ; Martens, K. ; IEEE

• Tipo de documento: Artigo Científico
• Fonte: 2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM); v. N/A, p. 4-pg., 2020-01-01.

Resumo

We report on the smallest silicon FinFETs functioning as biosensors with 13 nm wide fins and 50 nm gate lengths. These electrolytically gated finFETs exhibit a near-ideal subthreshold swing (similar to 65 mV/dec) and a median voltage referred 1/f noise of only similar to 470 mu V-2 mu m(2)/Hz (at 1Hz, at threshold). Binding biomolecules to the chemically modified gate dielectric surface changes the threshold voltage VT. DNA-PNA hybridization shows a statistically significant signal across all device geometries (50 nm - 10 mu m gate length) with a median VT shift of 36 mV for a hybridized 15 base DNA surface density of similar to 8x10(12) cm(-2). We obtain a clear signal of 17 mV for a 20 base DNA surface density of similar to 8x10(11) cm(-2), which amounts to tens of molecules for a 13 nm wide and 90 nm long device. This is a major improvement compared to our previously reported 250 nm long FETs which picked up similar to 800 molecules and a significant step forward towards the realization of single molecule sensing with fully integrated silicon FETs. Finally, based on experiment and simulation, we predict single-molecule detection with SNR > 5 to be possible with sub-70 nm finFETs. (AU)

• Processo FAPESP: 19/23283-4 - Medidas de ruído em baixa frequência de SOI FinFETs operando como elementos biossensores
• Beneficiário: Carlos Augusto Bergfeld Mori
• Modalidade de apoio: Bolsas no Exterior - Estágio de Pesquisa - Doutorado