Hole conductivity through a defect band in ZnGa2O4

Autor(es)

Sabino, Fernando P. ; Chatratin, Intuon ; Janotti, Anderson ; Dalpian, Gustavo M.

• Tipo de documento: Artigo Científico
• Fonte: PHYSICAL REVIEW MATERIALS; v. 6, n. 6, p. 10-pg., 2022-06-15.

Resumo

Semiconductors with a wide band gap (>3.0 eV), high dielectric constant (>10), good thermal dissipation, and capable of n- and p-type doping are highly desirable for high-energy power electronic devices. Recent studies indicate that ZnGa2O4 may be suitable for these applications, standing out as an alternative to Ga2O3. The simple face-centered-cubic spinel structure of ZnGa2O4 results in isotropic electronic and optical properties, in contrast to the large anisotropic properties of the beta-monoclinic Ga2O3. In addition, ZnGa2O4 has shown, on average, better thermal dissipation and potential for n- and p-type conductivity. Here we use density functional theory and hybrid functional calculations to investigate the electronic, optical, and point defect properties of ZnGa2O4, focusing on the possibility for p- and n-type conductivity. We find that the cation antisite Ga-Zn is the lowest-energy donor defect that can lead to unintentional n-type conductivity. The stability of self-trapped holes (small hole polarons) and the high formation energy of acceptor defects make it difficult to achieve p-type conductivity. However, with an excess of Zn, forming Zn(1+2x)Ga2(1-x)O4 alloys, this compound can display an intermediate valence band, facilitating p-type conductivity. Due to the localized nature of this intermediate valence band, p-type conductivity by polaron hopping is expected, explaining the low mobility and low hole density observed in recent experiments. (AU)

• Processo FAPESP: 17/02317-2 - Interfaces em materiais: propriedades eletrônicas, magnéticas, estruturais e de transporte
• Beneficiário: Adalberto Fazzio
• Modalidade de apoio: Auxílio à Pesquisa - Temático
• Processo FAPESP: 19/21656-8 - Métodos de Big Data para ajustar perovskitas às propriedades alvo: ligas, defeitos e dopagem
• Beneficiário: Fernando Pereira Sabino
• Modalidade de apoio: Bolsas no Brasil - Pós-Doutorado