| Texto completo | |
| Autor(es): |
Sasaki, K. R. A.
;
Range, R. C.
;
Yojo, L. S.
;
Martino, J. A.
;
IEEE
Número total de Autores: 5
|
| Tipo de documento: | Artigo Científico |
| Fonte: | 2020 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS); v. N/A, p. 4-pg., 2020-01-01. |
| Resumo | |
Nanoribbons built on gateless (GL) Ultra-Thin Body and Buried Oxide (UTBB) Back Enhanced SOI ((SOI)-S-BE) pMOSFET were analyzed as a charge-based (CB) biosensor for positive and negative charges into the biomaterial for the first time. Experimental GL BESOI pMOSFET was used as the basic structure for the CB biosensor and the influence of the charges were studied by numerical simulations. In general, when the CB biosensor was biased at weak inversion, the sensitivity is higher than when it was biased at strong inversion. For negative charges in the biomaterial, the conduction at front interface is favored. On the other hand, the conduction at back interface is higher if the biomaterial has positive charges. The nanoribbon GL UTBB (SOI)-S-BE pMOSFET showed to be a promising structure for an integrated charged based biosensor. (AU) | |
| Processo FAPESP: | 18/01568-4 - Otimização de transistores BE SOI MOSFET como plataforma para aplicação em biossensores |
| Beneficiário: | Leonardo Shimizu Yojo |
| Modalidade de apoio: | Bolsas no Brasil - Doutorado |