| Texto completo | |
| Autor(es): |
Horta, Isabela Machado
;
Damasceno, Barbara Souza
;
de Oliveira, Regiane Santana
;
Pereira, Andre Luis de Jesus
;
Massi, Marcos
;
Sobrinho, Argemiro Soares da Silva
;
Leite, Douglas Marcel Gonsalves
Número total de Autores: 7
|
| Tipo de documento: | Artigo Científico |
| Fonte: | SURFACES AND INTERFACES; v. 40, p. 7-pg., 2023-06-12. |
| Resumo | |
AlGaN thin films with different Al content were grown via reactive magnetron sputtering onto glass substrates using independent Al and Ga targets. The quality of the films was analyzed using X-ray diffraction, Raman spectroscopy, energy dispersive spectroscopy, and UV-Vis spectrophotometry. The results show that the Al content can be effectively controlled by tuning the power ratio applied to the independent targets in different absolute situations. Moreover, all produced samples presented only wurtzite structure without indication of other phases on both X-ray diffraction and Raman spectroscopy analyses. Overall, the properties of the films had a strong correlation with the composition, such as the expected blue shift of the optical bandgap and the Raman phonon modes, and the lattice cell expansion with increasing Al content. In addition, a higher c-orientation texture together with a sharper diffraction peak were observed for samples with more Al. (AU) | |
| Processo FAPESP: | 15/06241-5 - Produção de filmes e heteroestruturas à base de GaN pela técnica de sputtering reativo para aplicações em dispositivos SAW |
| Beneficiário: | Douglas Marcel Gonçalves Leite |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |
| Processo FAPESP: | 11/50773-0 - Núcleo de excelência em física e aplicações de plasmas |
| Beneficiário: | Ricardo Magnus Osório Galvão |
| Modalidade de apoio: | Auxílio à Pesquisa - Temático |